The influence of inhomogeneities of materials on spectrometric characteristics of silicon detectors

  • A.K. Saymbetov Al Farabi Kazakh National University, Kazakhstan, Almaty
  • N.M. Japashov Al Farabi Kazakh National University, Kazakhstan, Almaty
  • N.K. Sissenov Al Farabi Kazakh National University, Kazakhstan, Almaty
  • B.K. Mukhametkali Al Farabi Kazakh National University, Kazakhstan, Almaty
  • N.B. Kuttybay Al Farabi Kazakh National University, Kazakhstan, Almaty
  • Ye. Tulkibayuly Al Farabi Kazakh National University, Kazakhstan, Almaty
  • M.K. Nurgaliyev Al Farabi Kazakh National University, Kazakhstan, Almaty
  • A.A. Mansurova Al Farabi Kazakh National University, Kazakhstan, Almaty

Abstract

This work deals with influence of inhomogeneities of initial materials, for manufacturing Si(Li) detectors, on detector’s spectrometric characteristics. It is shown the results of investigation of structural features of Si(Li) detectors. The results of the research, of diffusion and drift of lithium ions into silicon, grown by Chohralski method and floating zone melting method, were described. It was shown that insufficient compensation of detector’s sensitive area is due to existence of local inhomogeneities in initial crystal volume, and also with imperfection of contacts of p-i-n structure. Moreover, it was described the current- voltage and farad- voltage characteristics of Si(Li) detectors. Also, the energy spectra of detector structure on the β-particles 207Bi (Eβ = 1 MeV) Rβ = 38 keV and α-particles 226Ra (Eα = 7.65 MeV) Ra = 65 keV was illustrated. It was experimentally approved that the results from low ohm p-Si crystal, grown by Chohralski method, have advantages to manufacture of big size Si(Li) p-i-n detectors, with low value of reverse current and high exploitation characteristic.

References

1 Y.K. Akimov, Instruments and Experimental Techniques, 50(1), 1-28,(2007).

2 S.A., Azimov R.A. Muminov, et.al. Silicon-Lithium Nuclear Radiation Detectors, FAN, Tashkent, p. 256, (1981).

3 M.K. Bakhadirkhanov et al., Semiconductors, 44(9), 1145-1148, (2010).

4 B.A. Abdurakhmanov et al., Nanoscience and Nanotechnology, 4(3), 41-43, (2014).

5 S.Z. Karazhanov, Semiconductors, 34(8), 872-879, (2000).

6 A.K. Saymbetov, N.M. Japashov, N.K. Sissenov, N.B. Kuttybay, B.K. Mukhametkali, Ye. Tulkibayuly, M.K. Nurgaliyev, Bulletin of National Academy of sciences of the republic of Kazakhstan, 1(359), 15-18, (2016).
Published
2018-03-10
How to Cite
SAYMBETOV, A.K. et al. The influence of inhomogeneities of materials on spectrometric characteristics of silicon detectors. Recent Contributions to Physics (Rec.Contr.Phys.), [S.l.], v. 59, n. 4, p. 96-100, mar. 2018. ISSN 1563-0315. Available at: <http://bph.kaznu.kz/index.php/zhuzhu/article/view/498>. Date accessed: 25 sep. 2018.
Section
Condensed Matter Physics and Materials Science Problems. NanoScience

Most read articles by the same author(s)

Obs.: This plugin requires at least one statistics/report plugin to be enabled. If your statistics plugins provide more than one metric then please also select a main metric on the admin's site settings page and/or on the journal manager's settings pages.