BEISENKHANOV, N. THE STRUCTURE OF THIN SILICON LAYERS WITH CONCENTRATION OF IMPLANTED CARBON NC/NSI=0.12. Recent Contributions to Physics, [S. l.], v. 2008, n. 3, p. 99–105, 2008. Disponível em: https://bph.kaznu.kz/index.php/zhuzhu/article/view/1495. Acesso em: 10 feb. 2026.