Aimaganbetov, K. and Tokmoldin, N. (2017) “Study of deep level parameters in a silicon diode using capacity-based deep level transient spectroscopy”, Recent Contributions to Physics, 2017(3), pp. 100–105. Available at: https://bph.kaznu.kz/index.php/zhuzhu/article/view/571 (Accessed: 2 February 2026).