[1]
V. Grafutin, O. Ilyukhina, G. Myasishcheva, E. Prokopiev, S. Timoshenkov, and Y. Funtikov, “POSSIBILITIES OF STUDYING OF NANOOBJECTS IN POROUS SILICON AND WAFERS OF SILICON IRRADIATED BY PROTONS BY METHOD OF POSITRON ANNIHILATION SPECTROSCOPY”, Rec.Contr.Phys., vol. 2009, no. 3, pp. 47–54, Nov. 2018.