Aimaganbetov K, Tokmoldin N. Study of deep level parameters in a silicon diode using capacity-based deep level transient spectroscopy. Rec.Contr.Phys. [Internet]. 2017 Sep. 25 [cited 2026 Feb. 2];2017(3):100-5. Available from: https://bph.kaznu.kz/index.php/zhuzhu/article/view/571