РЕЛАКСАЦИОННЫЕ КОЛЕБАНИЯ СУПЕРЛЮМИНЕСЦЕНЦИИ В ПОЛУПРОВОДНИКЕ.  ШАЛАӨТКІЗГІШТЕГІ СУПЕРЛЮМИНЕСЦЕНЦИЯНЫҢ РЕЛАКСАЦИЯЛЫҚ ТЕРБЕЛІСТЕРІ

S. E. Kumekov; A. T. Mustafin

RELAXATION OSCILLATIONS OF THE SUPERLUMINESCENCE IN THE SEMICONDUCTOR

Authors

S. E. Kumekov Казахский национальный технический университет им. К.И. Сатпаева
A. T. Mustafin Мэрилендский университет

Keywords:

intensity modulation of superluminescence

Abstract

The intensity modulation of superluminescence with a period of about 1 picosecond in a semiconductor subject to an ultra-short high-power light pulse is shown to occur due to relaxation oscillations of radiation caused by local perturbations of quasi-Fermi distribution of non-equilibrium electrons in energy space.

Downloads

PDF (Russian)

Issue

Vol. 2009 No. 3 (2009): KazNU Bulletin. Physics series

Section

Plasma Physics

How to Cite

[1]

S. E. Kumekov and A. T. Mustafin, “RELAXATION OSCILLATIONS OF THE SUPERLUMINESCENCE IN THE SEMICONDUCTOR”, Rec.Contr.Phys., vol. 2009, no. 3, pp. 43–46, Sep. 2009, Accessed: Jul. 10, 2026. [Online]. Available: https://bph.kaznu.kz/index.php/zhuzhu/article/view/206