AIMAGANBETOV, K.P.; TOKMOLDIN, N.S. Study of deep level parameters in a silicon diode using capacity-based deep level transient spectroscopy. Хабаршы. Физика сериясы, [S. l.], v. 2017, n. 3, p. 100–105, 2017. Disponível em: https://bph.kaznu.kz/index.php/zhuzhu/article/view/571. Acesso em: 5 jul. 2026.