Aimaganbetov, K.P., and N.S. Tokmoldin. “Study of Deep Level Parameters in a Silicon Diode Using Capacity-Based Deep Level Transient Spectroscopy”. Хабаршы. Физика сериясы 2017, no. 3 (September 25, 2017): 100–105. Accessed July 15, 2026. https://bph.kaznu.kz/index.php/zhuzhu/article/view/571.