Сarbon film obtained by ion-plasma sputtering

Authors

  • M.Zh. Buranbaev Al-Farabi Kazakh National University, Kazakstan, Almaty
  • Zh.A. Entibekov Al-Farabi Kazakh National University, Kazakstan, Almaty
  • O.E. Kaipoldayev Al-Farabi Kazakh National University, Kazakstan, Almaty
  • A.M. Derbissalin Al-Farabi Kazakh National University, Kazakstan, Almaty

Keywords:

amorphous semiconductor films, ion-plasma carbon films sputter, silicon substrate, phase composition

Abstract

By ion-plasma sputtering, carbon films were obtained. We consider the phase composition, internal structure, surface morphology, measured the thickness of the films

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Published

2012-03-25

Issue

Vol. 2012 No. 1 (2012): KazNU Bulletin. Physics series

Section

Condensed Matter Physics and Materials Science Problems. NanoScience

How to Cite

[1]
M. Buranbaev, Z. Entibekov, O. Kaipoldayev, and A. Derbissalin, “Сarbon film obtained by ion-plasma sputtering”, Rec.Contr.Phys., vol. 2012, no. 1, pp. 12–15, Mar. 2012, Accessed: Jul. 09, 2026. [Online]. Available: https://bph.kaznu.kz/index.php/zhuzhu/article/view/672

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