POSSIBILITIES OF STUDYING OF NANOOBJECTS IN POROUS SILICON AND WAFERS OF SILICON IRRADIATED BY PROTONS BY METHOD OF POSITRON ANNIHILATION SPECTROSCOPY

Authors

  • V.I. Grafutin FSUE SSC RF A.I. Alikhanov Institute of Theoretical and Experimental Physics, Moscow
  • O.V. Ilyukhina FSUE SSC RF A.I. Alikhanov Institute of Theoretical and Experimental Physics, Moscow
  • G.G. Myasishcheva FSUE SSC RF A.I. Alikhanov Institute of Theoretical and Experimental Physics, Moscow
  • E.P. Prokopiev FSUE SSC RF A.I. Alikhanov Institute of Theoretical and Experimental Physics, Moscow
  • S.P. Timoshenkov Moscow State Institute of Electronic Engineering (MIET), Zelenograd
  • Yu.V. Funtikov FSUE SSC RF Institute of Theoretical and Experimental Physics. A.I. Alikhanova, Moscow

Abstract

It is shown, that one of effective modern methods of definition of the nanodefect sizes (vacancies, vacansion clasters), free volumes of porous, cavities, emptiness in nanomaterials and porous systems is the method of positron annihilation spectroscopy (PAS). Examples of definition of the sizes and concentration of porous and free volumes in porous silicon, silicon and the monocrystals of quartz irradiated by protons are resulted.

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Published

2018-11-28

Issue

Vol. 2009 No. 3 (2009): KazNU Bulletin. Physics series

Section

Condensed Matter Physics and Materials Science Problems. NanoScience

How to Cite

POSSIBILITIES OF STUDYING OF NANOOBJECTS IN POROUS SILICON AND WAFERS OF SILICON IRRADIATED BY PROTONS BY METHOD OF POSITRON ANNIHILATION SPECTROSCOPY. (2018). Recent Contributions to Physics, 2009(3), 47-54. https://bph.kaznu.kz/index.php/zhuzhu/article/view/1078