Влияние трехминутной обработки водородной плазмой на структуру и свойства тонких пленок SnO2

N.M. Tompakova; E.A. Dmitriyeva; E.A. Grushevskaya; I.A. Lebedev; A.S. Serikkanov; D.M. Mukhamedshina; K.A. Mit’

doi:10.26577/RCPh-2019-i4-9

Authors

N.M. Tompakova Satpayev University, Institute of Physics and Technology, Almaty, Kazakhstan
E.A. Dmitriyeva Satpayev University, Institute of Physics and Technology, Almaty, Kazakhstan
E.A. Grushevskaya Satpayev University, Institute of Physics and Technology, Almaty, Kazakhstan
I.A. Lebedev Satpayev University, Institute of Physics and Technology, Almaty, Kazakhstan
A.S. Serikkanov Satpayev University, Institute of Physics and Technology, Almaty, Kazakhstan
D.M. Mukhamedshina Satpayev University, Institute of Physics and Technology, Almaty, Kazakhstan
K.A. Mit’ Satpayev University, Institute of Physics and Technology, Almaty, Kazakhstan

DOI:

10.26577/RCPh-2019-i4-9

Keywords:

thin films, tin dioxide SnO2, plasma treatment, hydrogen plasma, film resistance, transmittance coefficient

Abstract

Thin films of tin dioxide were obtained from five-water tin tetrachloride by dissolution in 97% ethanol. The concentration of tin ions in the film-forming solution was 0.12 mol/l, 0.16 mol/l, 0.2 mol/l. The film-forming solution SnCl₄/EtOH was applied to the surface of glass substrates by a modified dipping method. Substrates were dried in the air and then annealed at 400°C. Just 4 layers were applied. Hydrogen plasma treatment was carried out at a pressure of 6.5 Pa, power of 20 Watts, oscillation frequency generated by the equipment 27.12 MHz ±0.6%. The decrease of transparency, within the limits of accuracy of measurement of the films obtained from film-forming system with a concentration of tin ions of 0.12 mol/l and 0.2 mol/l were observed. The transparency of the films obtained from film-forming systems with tin ion concentration 0.16 mol/l decreased by 3%. The resistance of the films decreased by 1.5 times. X-ray diffraction analysis showed an increase in the intensity of diffraction peaks from the planes of SnO₂ crystallites. An important technical result was obtained: a decrease in the resistance of SnO₂ thin films without a significant decrease in transparency, using a film-forming solution with a tin ion concentration of 0.12 mol/l and 0.2 mol/l after treatment for 3 minutes in hydrogen plasma.