THE STRUCTURE OF THIN SILICON LAYERS WITH CONCENTRATION OF IMPLANTED CARBON NC/NSI=0.12

Abstract

The structure, phase and elemental composition of implanted Si layer with carbon concentration N_C/N_Si = 0.12 were studied by transmission electron microscopy, X-ray diffraction, Auger spectroscopy, IR spectroscopy and atom force microscopy. The correlation between types of prevailing Si-C bonds, processes of crystallization and the maximum IR-transmission peak position in the interval 720-830 cm^-1 was shown. The breaking of strong optically inactive Si-C clusters at temperatures above 1200°C leads to an increase in the number of Si-C tetrahedral bonds in layer SiC_0.12. The transformations of surface structure after implantation and high temperature annealing were studied.