FEATURES OF THE RAMAN SCATTERING IN QUASIPERIODIC NANOSTRUCTURES OF POROUS SILICON

Авторлар

  • D. Mamichev Physics Department, Lomonosov Moscow State University, Moscow, Russia
  • G. Mussabek Al-Farabi Kazakh National University, Kazakstan, Almaty
  • V. Goryachev Physics Department, Lomonosov Moscow State University, Moscow, Russia
  • L. Golovan Physics Department, Lomonosov Moscow State University, Moscow, Russia
  • Ye. Taurbayev Physics Department, Lomonosov Moscow State University, Moscow, Russia
  • V.Yu. Timoshenko Физический факультет Московского государственного университета им. М.В.Ломоносова, Москва, Россия
  • T.I. Taurbayev Al-Farabi Kazakh National University, Kazakstan, Almaty

Аңдатпа

The possibility of intensity enhancement of Raman scattering of near infrared light on the photon band gap edge in periodic multilayer structures produced from porous silicon consisting of porous silicon layers sequences with a high and low refractive index was shown theoretically and experimentally. The obtained results show perspectivity of use of these structures as a matrix for enhancement of Raman scattering efficiency.

Жүктеулер

Жарияланды

2018-11-28

Журналдың саны

Нөмір 2018 № 1 (2018): KazNU Bulletin. Physics series

Бөлім

Condensed Matter Physics and Materials Science Problems. NanoScience

Дәйексөзді қалай келтіруге болады

FEATURES OF THE RAMAN SCATTERING IN QUASIPERIODIC NANOSTRUCTURES OF POROUS SILICON. (2018). Хабаршы. Физика сериясы, 2018(1), 67-71. https://bph.kaznu.kz/index.php/zhuzhu/article/view/1061

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