Thermal conductivity of donor-doped GaN – investigations with 3-ωand stationary metod

Authors

  • O. Churiukova Institute of Low Temperature and Structure ResearchPolish Academy of Sciences
  • A. Jeżowski Institute of Low Temperature and Structure ResearchPolish Academy of Sciences
  • P. Stachowiak Institute of Low Temperature and Structure ResearchPolish Academy of Sciences
  • J. Mucha Institute of Low Temperature and Structure ResearchPolish Academy of Sciences
  • W. Trzebiatowski Institute of Low Temperature and Structure ResearchPolish Academy of Sciences
  • P. Perlin Institute of High Pressure Physics, Polish Academy of Sciences
  • T. Suski Institute of High Pressure Physics, Polish Academy of Sciences

Keywords:

Thermal conductivity, donor doping.

Abstract

Gallium nitride due to its unique optical properties and therefore possible applications has been attracting much attention of researchers for over one decade. Thermal conductivity is of interest as a key parameter in the design of high-power devices in which gallium nitride is an important element.

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Issue

Vol. 2015 No. 3 (2015): KazNU Bulletin. Physics series

Section

Plasma Physics

How to Cite

Thermal conductivity of donor-doped GaN – investigations with 3-ωand stationary metod. (2015). Recent Contributions to Physics, 2015(3), 93-94. https://bph.kaznu.kz/index.php/zhuzhu/article/view/284

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