Thermal conductivity of donor-doped GaN – investigations with 3-ωand stationary metods

  • O. Churiukova Institute of Low Temperature and Structure ResearchPolish Academy of Sciences Str. Okólna 2, 50-422 Wrocław, Poland
  • A. Jeżowski Institute of Low Temperature and Structure ResearchPolish Academy of Sciences Str. Okólna 2, 50-422 Wrocław, Poland
  • P. Stachowiak Institute of Low Temperature and Structure ResearchPolish Academy of Sciences Str. Okólna 2, 50-422 Wrocław, Poland
  • J. Mucha Institute of Low Temperature and Structure ResearchPolish Academy of Sciences Str. Okólna 2, 50-422 Wrocław, Poland
  • P. Perlin Institute of High Pressure Physics, Polish Academy of Sciences, Al. Prymas Tysiaclecia 98, 01-424 Warsaw, Poland
  • T. Suski Institute of High Pressure Physics, Polish Academy of Sciences, Al. Prymas Tysiaclecia 98, 01-424 Warsaw, Poland
  • W. Trzebiatowski Institute of Low Temperature and Structure ResearchPolish Academy of Sciences Str. Okólna 2, 50-422 Wrocław, Poland

Abstract

Gallium nitride due to its unique optical properties and therefore possible applications has been attracting much attention of researchers for over one decade. Thermal conductivity is of interest as a key parameter in the design of high-power devices in which gallium nitride is an important element.
Published
2015-01-21
How to Cite
CHURIUKOVA, O. et al. Thermal conductivity of donor-doped GaN – investigations with 3-ωand stationary metods. Recent Contributions to Physics (Rec.Contr.Phys.), [S.l.], v. 50, n. 3, p. 93-94, jan. 2015. ISSN 2663-2276. Available at: <https://bph.kaznu.kz/index.php/zhuzhu/article/view/837>. Date accessed: 22 oct. 2020.
Section
Condensed Matter Physics and Materials Science Problems. NanoScience

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