Hardphase decomposition of semiconductors InP under the action of pulses of laser light

Authors

  • N.G. Jumamukhambetov Atyrau Institute of Oil and Gas, Atyrau, Kazakhstan
  • M.A. Janalieva Atyrau Institute of Oil and Gas, Atyrau, Kazakhstan
  • A.S. Dautova Atyrau Institute of Oil and Gas, Atyrau, Kazakhstan

Keywords:

laser radiation, the dislocation density, phosphide of indium single crystals

Abstract

It is shown the thermal stresses induced during laser pulse action result to significant increase a dislocation density. The dislocation density increases with rising the laser irradiation fluence and equals about 8,4∙107сm-2 at the fluence 250-300 J/cm2.

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Published

2012-12-21

Issue

Vol. 2012 No. 4 (2012): KazNU Bulletin. Physics series

Section

Condensed Matter Physics and Materials Science Problems. NanoScience

How to Cite

Hardphase decomposition of semiconductors InP under the action of pulses of laser light. (2012). Recent Contributions to Physics, 2012(4), 51-54. https://bph.kaznu.kz/index.php/zhuzhu/article/view/726