EVALUATION OF GaP SINGLE CRYSTALLINE MATRIX SUBSTRATES THICKNESS PREPARED BY SEPARATED GROWTH METHOD IN ЭTHE SYSTEM Sn- Ga / InP

Authors

  • V.S. Antoshchenko IETP, Al-Farabi Kazakh national university, Kazakhstan, Almaty
  • O.A. Lavrishchev IETP, Al-Farabi Kazakh national university, Kazakhstan, Almaty
  • YU.V. Frantsev IETP, Al-Farabi Kazakh national university, Kazakhstan, Almaty

Abstract

The thickness estimation method of GaP single crystalline matrix substrates prepared by separated growth method is suggested. Possibility of less than 20nm matrix substrates formation is shown.

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Published

2008-11-01

Issue

Vol. 2008 No. 3 (2008): KazNU Bulletin. Physics series

Section

Condensed Matter Physics and Materials Science Problems. NanoScience

How to Cite

EVALUATION OF GaP SINGLE CRYSTALLINE MATRIX SUBSTRATES THICKNESS PREPARED BY SEPARATED GROWTH METHOD IN ЭTHE SYSTEM Sn- Ga / InP. (2008). Recent Contributions to Physics, 2008(3), 71-75. https://bph.kaznu.kz/index.php/zhuzhu/article/view/1489

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