About the mechanism of formation of polycrystalline n-ZnO/p-CuO heterojunction

Authors

  • Sh.R. Adilov Kazakh National Research Technical University after K.I. Satpaev, Kazakhstan, Almaty
  • M.E. Kumekov M.-Kh. Dulati Taraz State University, Taraz, Kazakhstan
  • S.E. Kumekov Kazakh National Research Technical University after K.I. Satpaev, Kazakhstan, Almaty
  • E.I. Terukov Institute of Physics and Technology Ioffe Institute of the Russian Academy of Sciences, St. Petersburg, Russia

Keywords:

film polycrystalline zinc oxide, copper oxide polycrystalline films, epitaxial relationships heterojunc-tion

Abstract

The model of formation of heterojunction on the basis of polycrystalline films of zinc and copper oxides is considered. On the basis of the analysis of crystal structure of zinc and copper oxides it is carried sides of elementary cells between which out epitaxy parities are revealed. It is shown also, that alongside with performance of a rule epitaxy parities the affinity of values of ionic radiuses double charged ions Cu ++ and Zn ++ enables the realization of polycrystalline heterojunction in system ZnO/CuО.

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Published

2012-09-22

Issue

Vol. 2012 No. 3 (2012): KazNU Bulletin. Physics series

Section

Condensed Matter Physics and Materials Science Problems. NanoScience

How to Cite

About the mechanism of formation of polycrystalline n-ZnO/p-CuO heterojunction. (2012). Recent Contributions to Physics, 2012(3), 68-70. https://bph.kaznu.kz/index.php/zhuzhu/article/view/711

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