RELAXATION OSCILLATIONS OF THE SUPERLUMINESCENCE IN THE SEMICONDUCTOR

Authors

  • S.E. Kumekov K.I. Satpayev Kazakh National Technical University, Almaty, Kazakhstan
  • A.T. Mustafin University of Maryland, USA

Abstract

The intensity modulation of superluminescence with a period of about 1 picosecond in a semiconductor subject to an ultra-short high-power light pulse is shown to occur due to relaxation oscillations of radiation caused by local perturbations of quasi-Fermi distribution of non-equilibrium electrons in energy space.

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Published

2018-11-28

Issue

Vol. 2009 No. 3 (2009): KazNU Bulletin. Physics series

Section

Condensed Matter Physics and Materials Science Problems. NanoScience

How to Cite

RELAXATION OSCILLATIONS OF THE SUPERLUMINESCENCE IN THE SEMICONDUCTOR. (2018). Recent Contributions to Physics, 2009(3), 43-46. https://bph.kaznu.kz/index.php/zhuzhu/article/view/1077

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