Hardphase decomposition of semiconductors InP under the action of pulses of laser light

Authors

  • N.G. Jumamukhambetov Atyrau Institute of Oil and Gas, Atyrau, Kazakhstan
  • M.A. Janalieva Atyrau Institute of Oil and Gas, Atyrau, Kazakhstan
  • A.S. Dautova Atyrau Institute of Oil and Gas, Atyrau, Kazakhstan

Keywords:

laser radiation, the dislocation density, phosphide of indium single crystals

Abstract

It is shown the thermal stresses induced during laser pulse action result to significant increase a dislocation density. The dislocation density increases with rising the laser irradiation fluence and equals about 8,4∙107сm-2 at the fluence 250-300 J/cm2.

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Published

2012-12-21

Issue

Vol. 2012 No. 4 (2012): KazNU Bulletin. Physics series

Section

Condensed Matter Physics and Materials Science Problems. NanoScience

How to Cite

[1]
N. Jumamukhambetov, M. Janalieva, and A. Dautova, “Hardphase decomposition of semiconductors InP under the action of pulses of laser light”, Rec.Contr.Phys., vol. 2012, no. 4, pp. 51–54, Dec. 2012, Accessed: Jul. 12, 2026. [Online]. Available: https://bph.kaznu.kz/index.php/zhuzhu/article/view/726