Thermal conductivity of donor-doped GaN – investigations with 3-ωand stationary metod

O. Churiukova; A. Jeżowski; P. Stachowiak; J. Mucha; W. Trzebiatowski; P. Perlin; T. Suski

Thermal conductivity of donor-doped GaN – investigations with 3-ωand stationary metod

Авторы

O. Churiukova Institute of Low Temperature and Structure ResearchPolish Academy of Sciences
A. Jeżowski Institute of Low Temperature and Structure ResearchPolish Academy of Sciences
P. Stachowiak Institute of Low Temperature and Structure ResearchPolish Academy of Sciences
J. Mucha Institute of Low Temperature and Structure ResearchPolish Academy of Sciences
W. Trzebiatowski Institute of Low Temperature and Structure ResearchPolish Academy of Sciences
P. Perlin Institute of High Pressure Physics, Polish Academy of Sciences
T. Suski Institute of High Pressure Physics, Polish Academy of Sciences

Ключевые слова:

Thermal conductivity, donor doping.

Аннотация

Gallium nitride due to its unique optical properties and therefore possible applications has been attracting much attention of researchers for over one decade. Thermal conductivity is of interest as a key parameter in the design of high-power devices in which gallium nitride is an important element.

Загрузки

PDF (английский)

Выпуск

Том 2015 № 3 (2015): Вестник. Серия физическая

Раздел

Физика плазмы

Как цитировать

Thermal conductivity of donor-doped GaN – investigations with 3-ωand stationary metod. (2015). Recent Contributions to Physics, 2015(3), 93-94. https://bph.kaznu.kz/index.php/zhuzhu/article/view/284