EVALUATION OF GaP SINGLE CRYSTALLINE MATRIX SUBSTRATES THICKNESS PREPARED BY SEPARATED GROWTH METHOD IN THE SYSTEM Sn- Ga / InP

Yu. V. Arkhipov; A. Askaruly; V. Yu. Bychenkov; I. M. Tkachenko

EVALUATION OF GaP SINGLE CRYSTALLINE MATRIX SUBSTRATES THICKNESS PREPARED BY SEPARATED GROWTH METHOD IN THE SYSTEM Sn- Ga / InP

Авторы

Yu. V. Arkhipov Department of Optics and Plasma Physics, al-Farabi Kazakh National University
A. Askaruly Department of Optics and Plasma Physics, al-Farabi Kazakh National University
V. Yu. Bychenkov Physics institute
I. M. Tkachenko Department of Applied Mathematics, Polytechnic University of Valencia

Аннотация

The thickness estimation method of GaP single crystalline matrix substrates prepared by separated growth method is suggested. Possibility of less than 20nm matrix substrates formation is shown.

Загрузки

PDF (английский)

Выпуск

Том 2008 № 3 (2008): Вестник. Серия физическая

Раздел

Физика плазмы

Как цитировать

[1]

Y. V. Arkhipov, A. Askaruly, V. Y. Bychenkov, и I. M. Tkachenko, «EVALUATION OF GaP SINGLE CRYSTALLINE MATRIX SUBSTRATES THICKNESS PREPARED BY SEPARATED GROWTH METHOD IN THE SYSTEM Sn- Ga / InP», Rec.Contr.Phys., т. 2008, вып. 3, сс. 46–49, сен. 2008, просмотрено: 5 июль 2026 г. [онлайн]. доступно на: https://bph.kaznu.kz/index.php/zhuzhu/article/view/318