EVALUATION OF GaP SINGLE CRYSTALLINE MATRIX SUBSTRATES THICKNESS PREPARED BY SEPARATED GROWTH METHOD IN THE SYSTEM Sn- Ga / InP

Authors

  • Yu. V. Arkhipov Department of Optics and Plasma Physics, al-Farabi Kazakh National University
  • A. Askaruly Department of Optics and Plasma Physics, al-Farabi Kazakh National University
  • V. Yu. Bychenkov Physics institute
  • I. M. Tkachenko Department of Applied Mathematics, Polytechnic University of Valencia

Abstract

The thickness estimation method of GaP single crystalline matrix substrates prepared by separated growth method is suggested. Possibility of less than 20nm matrix substrates formation is shown.

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Issue

Vol. 2008 No. 3 (2008): KazNU Bulletin. Physics series

Section

Plasma Physics

How to Cite

EVALUATION OF GaP SINGLE CRYSTALLINE MATRIX SUBSTRATES THICKNESS PREPARED BY SEPARATED GROWTH METHOD IN THE SYSTEM Sn- Ga / InP. (2008). Recent Contributions to Physics, 2008(3), 46-49. https://bph.kaznu.kz/index.php/zhuzhu/article/view/318

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