Мodification of electronic properties of films and Bi-AS40S30Se30

Authors

  • N.G. Almasov IETP, Al-Farabi Kazakh National University, Kazakhstan, Almaty
  • O.Yu. Prikhodko IETP, Al-Farabi Kazakh National University, Kazakhstan, Almaty
  • N.E. Korobova IETP, Al-Farabi Kazakh National University, Kazakhstan, Almaty
  • S.A. Dusembayev IETP, Al-Farabi Kazakh National University, Kazakhstan, Almaty
  • K.D. Tsendin A.F. Ioffe Physico-Technical Institute, St. Petersburg, Russia

Keywords:

amorphous semiconductor films, ion-plasma spraying, chalcogenide glassy semiconductors (CGS), conductivity

Abstract

In this paper we study the electronic properties of amorphous films of As40S30Se30 modified Bi at. %. We determined the temperature dependence of conductivity, conductivity at room temperature, the activation energy of conductivity and optical band gap. After modifying the electronic parameters of Bi films vary considerably depending on the concentration.

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Published

2018-09-05

Issue

Vol. 2012 No. 1 (2012): KazNU Bulletin. Physics series

Section

Condensed Matter Physics and Materials Science Problems. NanoScience

How to Cite

Мodification of electronic properties of films and Bi-AS40S30Se30. (2018). Recent Contributions to Physics, 2012(1), 8-11. https://bph.kaznu.kz/index.php/zhuzhu/article/view/671

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