Getting thin films by SIC PECVD

Authors

  • M.A. Omarov "Physico-Technical Institute" LTD, Almaty, Kazakhstan
  • O.Yu. Prikhodko IETP, Al-Farabi Kazakh National University, Kazakhstan, Almaty
  • V.V. Klimenov "Physico-Technical Institute" LTD, Almaty, Kazakhstan
  • T. Aitmukan "Physico-Technical Institute" LTD, Almaty, Kazakhstan
  • B.E. Alpysbayeva Laboratory of Engineering Profile of al-Farabi KazNU, Almaty, Kazakhstan
  • I.S. Nevmerzhitsky "Physico-Technical Institute" LTD, Almaty, Kazakhstan

Keywords:

high-frequency discharge, the gas mixture, thin film, silicon carbide, Raman spectroscopy, scanning electron microscopy, the structure

Abstract

In this research work presents the results of obtaining silicon carbide in plasma-enhanced chemical vapor deposition with the application of a magnetic field. Obtained thin films of silicon carbide and cubic silicon carbide differ in their structure and some properties of a semiconductor.

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Published

2012-09-22

Issue

Vol. 2012 No. 3 (2012): KazNU Bulletin. Physics series

Section

Condensed Matter Physics and Materials Science Problems. NanoScience

How to Cite

[1]
M. Omarov, O. Prikhodko, V. Klimenov, T. Aitmukan, B. Alpysbayeva, and I. Nevmerzhitsky, “Getting thin films by SIC PECVD”, Rec.Contr.Phys., vol. 2012, no. 3, pp. 37–41, Sep. 2012, Accessed: Jul. 10, 2026. [Online]. Available: https://bph.kaznu.kz/index.php/zhuzhu/article/view/704

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