Getting thin films by SIC PECVD
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Keywords:
high-frequency discharge, the gas mixture, thin film, silicon carbide, Raman spectroscopy, scanning electron microscopy, the structureAbstract
In this research work presents the results of obtaining silicon carbide in plasma-enhanced chemical vapor deposition with the application of a magnetic field. Obtained thin films of silicon carbide and cubic silicon carbide differ in their structure and some properties of a semiconductor.
References
1. Nagasawa H. Et al. Properties of Free-Standing 3C-SiC Monocrystals Grown on Undulant-Si (001) Substrate //Silicon Carbide and Related Materials. - 2002. - P. 177-181.
2. Матузов А.В. и др. Методика эпитаксиального наращивания кубического карбида кремния на кремнии по технологии CVD // Известия высших учебных заведений. Материалы электронной техники. - 2007. - № 3. - С. 22-26.
3. Lebedev A.A. Heterojunctions and superlattices based on silicon carbide // Semicond. Sci. Technol. – 2006. – Vol. 21. – P.R17-R34.
2. Матузов А.В. и др. Методика эпитаксиального наращивания кубического карбида кремния на кремнии по технологии CVD // Известия высших учебных заведений. Материалы электронной техники. - 2007. - № 3. - С. 22-26.
3. Lebedev A.A. Heterojunctions and superlattices based on silicon carbide // Semicond. Sci. Technol. – 2006. – Vol. 21. – P.R17-R34.
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How to Cite
Omarov, M., Prikhodko, O., Klimenov, V., Aitmukan, T., Alpysbayeva, B., & Nevmerzhitsky, I. (2012). Getting thin films by SIC PECVD. Recent Contributions to Physics, 2012(3), 37–41. Retrieved from https://bph.kaznu.kz/index.php/zhuzhu/article/view/704
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Section
Condensed Matter Physics and Materials Science Problems. NanoScience
