Получение тонких пленок SIC методом PECVD

M.A. Omarov; O.Yu. Prikhodko; V.V. Klimenov; T. Aitmukan; B.E. Alpysbayeva; I.S. Nevmerzhitsky

Getting thin films by SIC PECVD

Authors

M.A. Omarov "Physico-Technical Institute" LTD, Almaty, Kazakhstan
O.Yu. Prikhodko IETP, Al-Farabi Kazakh National University, Kazakhstan, Almaty
V.V. Klimenov "Physico-Technical Institute" LTD, Almaty, Kazakhstan
T. Aitmukan "Physico-Technical Institute" LTD, Almaty, Kazakhstan
B.E. Alpysbayeva Laboratory of Engineering Profile of al-Farabi KazNU, Almaty, Kazakhstan
I.S. Nevmerzhitsky "Physico-Technical Institute" LTD, Almaty, Kazakhstan

Keywords:

high-frequency discharge, the gas mixture, thin film, silicon carbide, Raman spectroscopy, scanning electron microscopy, the structure

Abstract

In this research work presents the results of obtaining silicon carbide in plasma-enhanced chemical vapor deposition with the application of a magnetic field. Obtained thin films of silicon carbide and cubic silicon carbide differ in their structure and some properties of a semiconductor.