EVALUATION OF GaP SINGLE CRYSTALLINE MATRIX SUBSTRATES THICKNESS PREPARED BY SEPARATED GROWTH METHOD IN THE SYSTEM Sn- Ga / InP

Авторлар

  • Yu. V. Arkhipov Department of Optics and Plasma Physics, al-Farabi Kazakh National University
  • A. Askaruly Department of Optics and Plasma Physics, al-Farabi Kazakh National University
  • V. Yu. Bychenkov Physics institute
  • I. M. Tkachenko Department of Applied Mathematics, Polytechnic University of Valencia

Аңдатпа

The thickness estimation method of GaP single crystalline matrix substrates prepared by separated growth method is suggested. Possibility of less than 20nm matrix substrates formation is shown.

Жүктеулер

Журналдың саны

Нөмір 2008 № 3 (2008): KazNU Bulletin. Physics series

Бөлім

Plasma Physics

Дәйексөзді қалай келтіруге болады

EVALUATION OF GaP SINGLE CRYSTALLINE MATRIX SUBSTRATES THICKNESS PREPARED BY SEPARATED GROWTH METHOD IN THE SYSTEM Sn- Ga / InP. (2008). Хабаршы. Физика сериясы, 2008(3), 46-49. https://bph.kaznu.kz/index.php/zhuzhu/article/view/318

Осы автордың (немесе авторлардың) ең көп оқылатын мақалалары