PYEZO RESISTANCE OF DEFORMATED SILICON P – TYPE

Authors

  • B. Orazgulyev Каспийский государственный университет технологии и инжиниринга им. Ш.Е.Есенова
  • O. Bigozha
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Keywords:

pyezo resistance

Abstract

The experimental result gat by silicon p - type is led in this article by studying longitudinal and transverse pyezo resistance. It s shown that immonotonous character of transverse resistance is determined by comparative contribution to pyezo resistance mechanism migration of current carrier from the zone of «light» holes into «heavy» holes and the mechanism connected with discreasing meaning of effective mass of holes in the zone of heavy holes in conseguence of reconstruction of power spectrum with monoaxes deformation taking off degenerasy of valency zone.

References

1. Hensel J. C., Feher G. Cyclotron Resоnance in Uniaxially Stressed Silicon: Valence Band Inverse Mass Parameters and Deformation Potentials // Phys. Rev., 1963, v.129,№3, p.1041-1062.

2. Hensel J. C., Hasegamwa H., Nakayama M . Cyclotron Resenance in Uniaxially Stressed Silicon II. Nature of the Covalent Band // Phys. Rev., 1963, v.138,№1A, p.A225-A238.

3. Бир Г. Л., Пикус Г. Е. – Симметрия и деформационные эффекты в полупроводниках. М., «Наука», 1972, 584с.

4. Баранский П. И., Клочков В. П., Потыкевич И. Г. – кн. Полупроводниковая электроника. Справочник. Киев-1975 Изд. «Наукова Думка» 705с.

5. Баранский П. И., Буда И. С., Даховский И. В., Коломоец В. В. кн. Электрические и гальваномагнитные явления в анизотропных полупроводниках. Киев, «Наукова Думка», 1977.

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How to Cite

Orazgulyev, B., & Bigozha, O. (2009). PYEZO RESISTANCE OF DEFORMATED SILICON P – TYPE. Recent Contributions to Physics (Rec.Contr.Phys.), 29(2), 49–53. Retrieved from https://bph.kaznu.kz/index.php/zhuzhu/article/view/191

Issue

Section

Condensed Matter Physics and Materials Science Problems. NanoScience