Сarbon film obtained by ion-plasma sputtering

Authors

  • M.Zh. Buranbaev Al-Farabi Kazakh National University, Kazakstan, Almaty
  • Zh.A. Entibekov Al-Farabi Kazakh National University, Kazakstan, Almaty
  • O.E. Kaipoldayev Al-Farabi Kazakh National University, Kazakstan, Almaty
  • A.M. Derbissalin Al-Farabi Kazakh National University, Kazakstan, Almaty
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Keywords:

amorphous semiconductor films, ion-plasma carbon films sputter, silicon substrate, phase composition

Abstract

By ion-plasma sputtering, carbon films were obtained. We consider the phase composition, internal structure, surface morphology, measured the thickness of the films

References

1 SH.SH. Sarsembinov, O.YU. Prikhod'ko, S.YA. Maksimova Fizicheskiye osnovy modifikatsii elektronnykh svoystv nekristallicheskikh poluprovodnikov (Almaty: Kazak universitetí, 2005), 253-298 (in Russ).

2 A.P. Semenov, A.F. Belyanin, I.A. Semenova, P.V. Pashchenko, YU.A.Barankov, Zhurnal tekhnicheskoy nauki, 74 (5), 101-104. (2004) (in Russ)

3 Raiko, R. Spitzl, J. Engemann, V. Borisenko, V. Bondarenko, Diamond and Related Materials, 5, 1063-1069 (1996). (in Russ)

4 J. Wei, Y.Tzeng, J. Cryst. Growth., 128, 413-417 (1993). (in Russ)

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Published

2012-03-25

Issue

Vol. 40 No. 1 (2012): KazNU Bulletin. Physics series

Section

Condensed Matter Physics and Materials Science Problems. NanoScience

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