Mechanisms of self-screening in intrinsic semiconductors

Авторлар

  • I. Chikina IRAMIS, Lions, UMR 3299 CEA-CNRS NIMBE, CEA-Saclay, F-91191 Gif sur Yvette Cedex, France
  • V. Shikin Institute of Solid State Physics, Russian Academy of Sciences Chernogolovka, Moscow District, 2 Academician Ossipyan str., 142432 Russia
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Кілттік сөздер:

self-shielding, intrinsic semiconductor, method of Debye-Hyukelya

Аннотация

Electron-hole pairs (proton-hydroxyl pairs in water) thermally activated in intrinsic semiconductors interact through Coulomb forces which necessarily results in some self-screening that should either be accounted for in a proper way or shown to be negligible. Possible mechanisms of self-screening are considered in this work.

Библиографиялық сілтемелер

1 L.D.Landau, E.M.Lifshits, Statistical Physics. Moscow, Nauka, 1995 (in Russ).

2 M.Born, K.Huang. Dynamical Theory of Crystal Lattices.Moscow, Izdatin-lit, 1958 (in Russ).

Жүктелулер

Как цитировать

Chikina, I., & Shikin, V. (2015). Mechanisms of self-screening in intrinsic semiconductors. ҚазНУ Хабаршысы. Физика сериясы, 50(3), 45–46. вилучено із https://bph.kaznu.kz/index.php/zhuzhu/article/view/814

Шығарылым

Том 50 № 3 (2014): Вестник. Серия физическая

Бөлім

Физика конденсированного состояния и проблемы материаловедения. Нанонаука