CREATION AND INVESTIGATION OF PARAMETERS OF SEMICONDUCTOR DEVICES ON THE BASED AlAs-GaAs - FILMS

Authors

  • V. S. Antoschenko НИИЭТФ, Казахский национальный университет им. аль-Фараби
  • Sh. B. Baiganatova
  • T. I. Taurbayev
  • Yu. V. Frantsev

Keywords:

phototransducer

Abstract

A cheap thin-film phototransducer with Аu/n - GaАs/n+ - GаАs/n – AlGaAs structure that was formed using a molten solution by the method of growth separation during liquid-phase epitaxy has been developed. Our obtained results show the adventage of application of sepation-film technology for developing devices in micro- and optoelectronics.

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Issue

Vol. 2009 No. 4 (2009): KazNU Bulletin. Physics series

Section

Condensed Matter Physics and Materials Science Problems. NanoScience

How to Cite

[1]
V. S. Antoschenko, S. B. Baiganatova, T. I. Taurbayev, and Y. V. Frantsev, “CREATION AND INVESTIGATION OF PARAMETERS OF SEMICONDUCTOR DEVICES ON THE BASED AlAs-GaAs - FILMS”, Rec.Contr.Phys., vol. 2009, no. 4, pp. 40–44, Dec. 2009, Accessed: Jul. 11, 2026. [Online]. Available: https://bph.kaznu.kz/index.php/zhuzhu/article/view/223

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