Investigation of phase equilibriain the quinary system Sn-Bi-Ga-Al-As

Abstract

Phase equilibrium in the Sn-Bi-Al-Ga-As system (from 900 to 1100°K), with particular emphasis on theregions of technological importance to free-standing single crystalline GaAs filmsare investigated.Modifications to interaction parameters are made andcalculated phase data are presented. The liquid us data indicates it has a sharp interval of Al (X0 Al) where GaAs solubility doesn’t depend on Ga content in Bi-Sn solutions. At XAl>X0 AlGaAs solubility is increasing with XGa, and conversely at XAl< X0 Al the solubility is falling. The distribution coefficient for Al dramatically increases with XGa decreasing and more strongly with XBi increasing in Sn-Bi solutions. As indicates the solidus data of all Alx Ga1-x.As compositions(0< X <1) can be prepared at Al concentration in liquid less than 1% (at.). These results predetermine the possibility of the synthesis of free standing GaAs films in the systems on the basis of inert solvents