FORMATION OF LUMINESCENT NANOCRYSTALLINE SILICON FILMS FROM A-SI:H BY USING RAPID THERMAL ANNEALING AND WET CHEMICAL ETCHING

Ye. T. Taurbayev; K. K. Dihanbayev; V. E. Nikulin; E. A. Svanbayev; T. I. Taurbayev; Yu. Timoshenko; N. E. Maslova; K. A. Gonchar

FORMATION OF LUMINESCENT NANOCRYSTALLINE SILICON FILMS FROM A-SI:H BY USING RAPID THERMAL ANNEALING AND WET CHEMICAL ETCHING

Authors

Ye. T. Taurbayev Al-Farabi Kazakh National University
K. K. Dihanbayev Al-Farabi Kazakh National University
V. E. Nikulin Al-Farabi Kazakh National University
E. A. Svanbayev Al-Farabi Kazakh National University
T. I. Taurbayev Al-Farabi Kazakh National University
Yu. Timoshenko M.V. Lomonosov Moscow State University
N. E. Maslova M.V. Lomonosov Moscow State University
K. A. Gonchar M.V. Lomonosov Moscow State University

Keywords:

Nanocrystalline, photoluminescence methods

Abstract

Nanocrystalline silicon films, which exhibit efficient photoluminescence, were formed from amorphous films of hydrogenated silicon subjected to rapid thermal annealing and stain etching in hydrofluoric acid based solutions. The samples were investigated by means of scanning and transmission electron microscopy, optical spectroscopy of reflection, Raman scattering and photoluminescence methods, which revealed the nanocrystalline structure and excellent optical quality of the formed nc-Si films.

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Issue

Vol. 2009 No. 4 (2009): KazNU Bulletin. Physics series

Section

Condensed Matter Physics and Materials Science Problems. NanoScience

How to Cite

FORMATION OF LUMINESCENT NANOCRYSTALLINE SILICON FILMS FROM A-SI:H BY USING RAPID THERMAL ANNEALING AND WET CHEMICAL ETCHING. (2009). Recent Contributions to Physics, 2009(4), 67-72. https://bph.kaznu.kz/index.php/zhuzhu/article/view/228