Investigation of phase equilibriain the quinary system Sn-Bi-Ga-Al-As
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Keywords:
Phase equilibrium, solubility of GaAs, Free standing film, Bi-Sn solutionAbstract
Phase equilibrium in the Sn-Bi-Al-Ga-As system (from 900 to 1100°K), with particular emphasis on theregions of technological importance to free-standing single crystalline GaAs filmsare investigated.Modifications to interaction parameters are made andcalculated phase data are presented. The liquid us data indicates it has a sharp interval of Al (X0 Al) where GaAs solubility doesn’t depend on Ga content in Bi-Sn solutions. At XAl>X0 AlGaAs solubility is increasing with XGa, and conversely at XAl< X0 Al the solubility is falling. The distribution coefficient for Al dramatically increases with XGa decreasing and more strongly with XBi increasing in Sn-Bi solutions. As indicates the solidus data of all Alx Ga1-x.As compositions(0< X <1) can be prepared at Al concentration in liquid less than 1% (at.). These results predetermine the possibility of the synthesis of free standing GaAs films in the systems on the basis of inert solventsReferences
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2 Gladkov P., Monova E., Weber J.J. Liquid phase epitaxy of n‐type GaAs from Bi solution // J. Appl. Phys. – 1993. – Vol.74. – P.5020 – 5024.
3 Kressel H., Nelson H. Svoystva I primeneniya plenok soedineniy elementov grupp III i V, poluchennykh epitaksiey iz zhidkoy fazy // V sbornike Phizika tonkikh plenok. - M.:Mir, 1997.- V.7. - 443 p.
4 Antoshchenko V.S., Turbaev T.I., Baiganatova Sh.B. Izuchenie formirovaniya svobodno raspolozhennykh plenok arsenida galliya v usloviyakh rastvor-rasplavnoj kristallizatsii // KazNU Bulletin. Physics series. - 2005. - No 1 (19). - S.83-91.
5 Schermer J.J., Mulder P., Bauhuis G.J., M.M. Voncken A.J., J. van Deelen, Haverkamp E., and Larsen P.K. Epitaxial Lift-Off for large area thin film III/V devices // Phys. stat. sol. (a). – 2005. – Vol.202, No. 4. – P.501–508.
6 Hyun Kyong Cho, Sun-Kyung Kim, Duk Kyu Bae, Bong-Cheol Kang, Jeong Soo Lee, and Yong-Hee Lee Laser Lift off GaN thin-film photonic crystal GaN-based light-emitting diodes //IEEE photonics technology letter. – 2008. – Vol. 20, No. 24. – P.2096-2098.
7 Antoschenko V.S., Lavrischev O.A., Frantsev Yu.V., Antoschenko E.V. Raschet fazovojdiagrammy sistemy Bi-Ga-Al-As// KazNU Bulletin. Physics series. - 2012. - No 2 (41). - S.8-14.
8 Huber D. Thermodynamics of III-V solutions with n components// J. Phys. Chem. Solids. – 1973. - Vol.34. - P.1859-1865.
9 Panish M.B. Phase equilibria in the system Al-Ga-As-Sn and electrical properties of Sn-doped liquid phase epitaxial Alx Ga1-xAs // J.Appl.Phys. – 1973. – Vol. 44, No 6. - P.2667-2675.
10 Diagrammy sostoyaniya dvojnykh metallicheskikh sistem. - Spravochnik v 3-kh tomakh, tom 1, pod red. akad. RAN N.P. Lyakisheva. - M.: Mashinostroenie, 1996, 992s.ASM Handbook, V.3, Alloy Phase Diagrams, ASM International, 1992, 1741 p.
11 Panek M., Ratuszek M., Tlaczala M. Kinetics and edge growth effects of GaAs LPE layers grown in the Ga-As-Bi system// J.of Materials Science. – 1986. – Vol. 21. - P.3977-3980.
12 Rubenstein M. Solubility of GaAs in metallic solvents // J. Electrochem. Soc. – 1966. - Vol.113, No 7. - P.752-753.
13 Antoschenko V.S., Taurbaev T.I. Otdelyaemyj rost sovershennykh mono kristallicheskikh plenok v sistemeSn-Ga-Al-As // Pisma v ZhTF. – 1990. – T.16, v.12. - S.1-5.
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Antoschenko, V. S., Francev, Y. V., Lavrischev, O. A., & Antoschenko, E. V. (2013). Investigation of phase equilibriain the quinary system Sn-Bi-Ga-Al-As. Recent Contributions to Physics (Rec.Contr.Phys.), 44(1), 11–17. Retrieved from https://bph.kaznu.kz/index.php/zhuzhu/article/view/65
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Condensed Matter Physics and Materials Science Problems. NanoScience
