Thermal conductivity of donor-doped GaN – investigations with 3-ωand stationary metods

Авторлар

  • O. Churiukova Institute of Low Temperature and Structure ResearchPolish Academy of Sciences Str. Okólna 2, 50-422 Wrocław, Poland
  • A. Jeżowski Institute of Low Temperature and Structure ResearchPolish Academy of Sciences Str. Okólna 2, 50-422 Wrocław, Poland
  • P. Stachowiak Institute of Low Temperature and Structure ResearchPolish Academy of Sciences Str. Okólna 2, 50-422 Wrocław, Poland
  • J. Mucha Institute of Low Temperature and Structure ResearchPolish Academy of Sciences Str. Okólna 2, 50-422 Wrocław, Poland
  • P. Perlin Institute of High Pressure Physics, Polish Academy of Sciences, Al. Prymas Tysiaclecia 98, 01-424 Warsaw, Poland
  • T. Suski Institute of High Pressure Physics, Polish Academy of Sciences, Al. Prymas Tysiaclecia 98, 01-424 Warsaw, Poland
  • W. Trzebiatowski Institute of Low Temperature and Structure ResearchPolish Academy of Sciences Str. Okólna 2, 50-422 Wrocław, Poland
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Кілттік сөздер:

Thermal conductivity, donor doping

Аннотация

Gallium nitride due to its unique optical properties and therefore possible applications has been attracting much attention of researchers for over one decade. Thermal conductivity is of interest as a key parameter in the design of high-power devices in which gallium nitride is an important element.

Жүктелулер

Как цитировать

Churiukova, O., Jeżowski, A., Stachowiak, P., Mucha, J., Perlin, P., Suski, T., & Trzebiatowski, W. (2015). Thermal conductivity of donor-doped GaN – investigations with 3-ωand stationary metods. ҚазНУ Хабаршысы. Физика сериясы, 50(3), 93–94. вилучено із https://bph.kaznu.kz/index.php/zhuzhu/article/view/837

Шығарылым

Том 50 № 3 (2014): Вестник. Серия физическая

Бөлім

Физика конденсированного состояния и проблемы материаловедения. Нанонаука

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