Thermal conductivity of donor-doped GaN – investigations with 3-ωand stationary metods

Authors

  • O. Churiukova Institute of Low Temperature and Structure ResearchPolish Academy of Sciences Str. Okólna 2, 50-422 Wrocław, Poland
  • A. Jeżowski Institute of Low Temperature and Structure ResearchPolish Academy of Sciences Str. Okólna 2, 50-422 Wrocław, Poland
  • P. Stachowiak Institute of Low Temperature and Structure ResearchPolish Academy of Sciences Str. Okólna 2, 50-422 Wrocław, Poland
  • J. Mucha Institute of Low Temperature and Structure ResearchPolish Academy of Sciences Str. Okólna 2, 50-422 Wrocław, Poland
  • P. Perlin Institute of High Pressure Physics, Polish Academy of Sciences, Al. Prymas Tysiaclecia 98, 01-424 Warsaw, Poland
  • T. Suski Institute of High Pressure Physics, Polish Academy of Sciences, Al. Prymas Tysiaclecia 98, 01-424 Warsaw, Poland
  • W. Trzebiatowski Institute of Low Temperature and Structure ResearchPolish Academy of Sciences Str. Okólna 2, 50-422 Wrocław, Poland
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Keywords:

Thermal conductivity, donor doping

Abstract

Gallium nitride due to its unique optical properties and therefore possible applications has been attracting much attention of researchers for over one decade. Thermal conductivity is of interest as a key parameter in the design of high-power devices in which gallium nitride is an important element.

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Published

2015-01-21

How to Cite

Churiukova, O., Jeżowski, A., Stachowiak, P., Mucha, J., Perlin, P., Suski, T., & Trzebiatowski, W. (2015). Thermal conductivity of donor-doped GaN – investigations with 3-ωand stationary metods. Recent Contributions to Physics (Rec.Contr.Phys.), 50(3), 93–94. Retrieved from https://bph.kaznu.kz/index.php/zhuzhu/article/view/837

Issue

Vol. 50 No. 3 (2014): KazNU Bulletin. Physics series

Section

Condensed Matter Physics and Materials Science Problems. NanoScience

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