EVALUATION OF GaP SINGLE CRYSTALLINE MATRIX SUBSTRATES THICKNESS PREPARED BY SEPARATED GROWTH METHOD IN ЭTHE SYSTEM Sn- Ga / InP

Authors

  • V.S. Antoshchenko IETP, Al-Farabi Kazakh national university, Kazakhstan, Almaty
  • O.A. Lavrishchev IETP, Al-Farabi Kazakh national university, Kazakhstan, Almaty
  • YU.V. Frantsev IETP, Al-Farabi Kazakh national university, Kazakhstan, Almaty
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Abstract

The thickness estimation method of GaP single crystalline matrix substrates prepared by separated growth method is suggested. Possibility of less than 20nm matrix substrates formation is shown.

References

1. Antoschtnko V.S.,Taurbaev T.I. Skirnevskaya E.V. Formation peculiarities of III-V heterostructures by free film technology // 25th Conference on the Physics and Chemistry of Semiconductor Interfaces (PCSI-25), Salt Lake City, Utah18-22 Jan.1998,Abstr.1998.- Р.89.

2. Antoschenko V.S., Taurbaev T.I. Separated growth of monocrystalline films in the system Sn-Ga-Al-As // Abstr.1-st Int.Conf. on Epitaxial Cryst. Growth. April 1-7. 1990. Budapest,Hungary, 1990.- Р.411-413.

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How to Cite

Antoshchenko, V., Lavrishchev, O., & Frantsev, Y. (2008). EVALUATION OF GaP SINGLE CRYSTALLINE MATRIX SUBSTRATES THICKNESS PREPARED BY SEPARATED GROWTH METHOD IN ЭTHE SYSTEM Sn- Ga / InP. Recent Contributions to Physics (Rec.Contr.Phys.), 27(3), 71–75. Retrieved from https://bph.kaznu.kz/index.php/zhuzhu/article/view/1489

Issue

Vol. 27 No. 3 (2008): KazNU Bulletin. Physics series

Section

Condensed Matter Physics and Materials Science Problems. NanoScience