THE STRUCTURE OF THIN SILICON LAYERS WITH CONCENTRATION OF IMPLANTED CARBON NC/NSI=0.12
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Abstract
The structure, phase and elemental composition of implanted Si layer with carbon concentration NC/NSi = 0.12 were studied by transmission electron microscopy, X-ray diffraction, Auger spectroscopy, IR spectroscopy and atom force microscopy. The correlation between types of prevailing Si-C bonds, processes of crystallization and the maximum IR-transmission peak position in the interval 720-830 cm-1 was shown. The breaking of strong optically inactive Si-C clusters at temperatures above 1200°C leads to an increase in the number of Si-C tetrahedral bonds in layer SiC0.12. The transformations of surface structure after implantation and high temperature annealing were studied.
References
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3. Yаn Н., Wang В., Song Х.М., Таn L.W., Zhang S.J., Chen G.H., Wong S.P., Kwok R.W.M., Lео.W.M.Lau. Study on SiC layers synthesized with carbon ion beam at low substrate temperature // Diamond and related materials. 2000, 9, Р.1795-1798.
4. Dihu Chen, Wong S.P., Shenghong Yang, Mо D. Composition, structure and optical properties of SiC buried layer formed by high dose carbon implantation into Si using metal vapor vacuum arc ion source // Thin Solid Films, 2003, 426, Р.1-7.
5. Calcagno L., Compagnini G., Foti G., Grimaldi M.G., Musumeci Р. Carbon clustering in Si1-xCx formed by ion implantation // Nucl.Instrum. and Meth. 1996, B, 120, P.121- 124.
6. Nussupov K.Kh., Beisenkhanov N.B. and Tokbakov J. Investigation of structure and phase transformation in silicon implanted by 12C+ at room temperature. // Nucl.Instrum. and Meth. 1995, B103, Р.161-174.
7. Nussupov K.Kh., Sigle V.O. and Beisenkhanov N.B. Investigation of the formation of Si and SiC crystalline phases in room temperature C+ implanted Si // Nucl.Instrum. and Meth. 1993, B82, Р.69-79.
8. Kimura T., Kagiyama Sh. and Yugo Sh. Auger electron spectroscopy analysis of SiC layers form by carbon ion implantation into silicon // Thin Solid Films. 1984,122, 165-172.
9. Borders J.A., Picraux S.T. and Beezhold W. Formation of SiC in silicon by ion implantation // Appl.Phys.Lett. 1971, 18, 11, Р.509-511.
10. Баранова Е.K., Демаков K.Д., Старинин K.В., Стрельцов Л.Н., Хайбуллин И.Б. Исследование монокристаллических пленок SiC, полученных при бомбардировке ионами С+ монокристаллов Si // Доклады АН СССР. 1971, 200, 869.
11. K.Kh. Nussupov, N.B. Beisenkhanov, I.V.Valitova, K.A. Mit’, D.M. Mukhamedshina, E.A. Dmitrieva. Structure properties of carbon implanted silicon layers // Journal of Materials Science: Materials in Electronics. – 2008. - 19:S254-S262. DOI 10.1007/s10854-007-9533-9.
12. Lindner J.K.N., Volz K., Preckwinkel U., Gotz B., Frohnwieser, A. Stritzker B., Rauschenbach B. Formation of buried epitaxial silicon carbide layers in silicon by ion beam synthesis // Materials Chemistry and Physics. 1996, 46 (2-3), Р.147-155.
13. Буренков А.Ф., Комаров Ф.Ф., Кумахов М.А., Темкин М.М. Пространственные распределения энергии, выделенной в каскаде атомных столкновений в твердых телах. М. «Энергоиздат», 1985, 245 с.
14. Gibbons J.F., Johnson W.S. and Hylroic S.W. In “Projected Range Statistics” // 2nd ed. (Dowden, Stroudsburg. PA. 1975) Part 1, p.93.
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How to Cite
Beisenkhanov, N. (2008). THE STRUCTURE OF THIN SILICON LAYERS WITH CONCENTRATION OF IMPLANTED CARBON NC/NSI=0.12. Recent Contributions to Physics (Rec.Contr.Phys.), 27(3), 99–105. Retrieved from https://bph.kaznu.kz/index.php/zhuzhu/article/view/1495
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Condensed Matter Physics and Materials Science Problems. NanoScience
