Semiconductor Based Nanostructures for Solar Cells and Infrared Photonics
Keywords:
silicon, anisotropy, photonicsAbstract
Anisotropic porous silicon films and silicon nanowires were formed by electrochemical etching and metal-assisted chemical etching of crystalline Si in hydrofluoric acid solutions. Obtained samples were experimentally studied by means of the optical spectroscopy in the infrared spectral region. An approximation of the effective optical medium is used to model the optical properties of the prepared samples. Both the experimental data and modelling reveal anisotropy of the refraction and absorption. Anisotropic optical properties depend on the free charge carrier concentration in the samples that can be described by the model of Drude-Lorentz. Silicon nanowires layers with thickness more than 1 μm is found to demonstrate a strong decrease of the total reflectance below that can be used as antireflection coating in photovoltaics. These results demonstrate that anisotropic silicon nanostructures can be considered for applications in infrared photonic devices.
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