Semiconductor Based Nanostructures for Solar Cells and Infrared Photonics

К.С. Секербaев; Е.Т. Таурбаев; А.И. Ефимовa; Г.Е. Ботaнтaевa; Д. Ермұхaмед; Г.К. Мұсaбек; К.К. Дихaнбaев; В.Ю. Тимошенко; Т.И. Таурбаев

Авторлар

К.С. Секербaев IETP, Al Farabi Kazakh National Universiity, Kazakstan, Almaty
Е.Т. Таурбаев IETP, Al Farabi Kazakh National University, Kazakhstan, Almaty
А.И. Ефимовa Lomonosov Moscow State University, Russia, Moscow
Г.Е. Ботaнтaевa Al Farabi Kazakh National University, Kazakhstan, Almaty
Д. Ермұхaмед IETP, Al Farabi Kazakh National University, Kazakhstan, Almaty
Г.К. Мұсaбек IETP, Al Farabi Kazakh National University, Kazakhstan, Almaty
К.К. Дихaнбaев IETP, Al Farabi Kazakh National University, Kazakhstan, Almaty
В.Ю. Тимошенко Lomonosov Moscow State University, Moscow; Tomsk State Research University, Tomsk, Russia
Т.И. Таурбаев IETP, Al Farabi Kazakh National University, Kazakhstan, Almaty

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Кілттік сөздер:

silicon, anisotropy, photonics

Аннотация

Anisotropic porous silicon films and silicon nanowires were formed by electrochemical etching and metal-assisted chemical etching of crystalline Si in hydrofluoric acid solutions. Obtained samples were experimentally studied by means of the optical spectroscopy in the infrared spectral region. An approximation of the effective optical medium is used to model the optical properties of the prepared samples. Both the experimental data and modelling reveal anisotropy of the refraction and absorption. Anisotropic optical properties depend on the free charge carrier concentration in the samples that can be described by the model of Drude-Lorentz. Silicon nanowires layers with thickness more than 1 μm is found to demonstrate a strong decrease of the total reflectance below that can be used as antireflection coating in photovoltaics. These results demonstrate that anisotropic silicon nanostructures can be considered for applications in infrared photonic devices.

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