Semiconductor Based Nanostructures for Solar Cells and Infrared Photonics
Кілттік сөздер:
silicon, anisotropy, photonicsАннотация
Anisotropic porous silicon films and silicon nanowires were formed by electrochemical etching and metal-assisted chemical etching of crystalline Si in hydrofluoric acid solutions. Obtained samples were experimentally studied by means of the optical spectroscopy in the infrared spectral region. An approximation of the effective optical medium is used to model the optical properties of the prepared samples. Both the experimental data and modelling reveal anisotropy of the refraction and absorption. Anisotropic optical properties depend on the free charge carrier concentration in the samples that can be described by the model of Drude-Lorentz. Silicon nanowires layers with thickness more than 1 μm is found to demonstrate a strong decrease of the total reflectance below that can be used as antireflection coating in photovoltaics. These results demonstrate that anisotropic silicon nanostructures can be considered for applications in infrared photonic devices.
Библиографиялық сілтемелер
2 Головaнь Л. A., Тимошенко В. Ю., Кaшкaров П. К. Оптические свойствa нaнокомпозитов нa основе пористых систем // Успехи физических нaук. – 2007. – Т. 177, №. 6. – С. 619-638.
3 Sivakov V., Christiansen S. Novel discovery of silicon //Journal of Nanoelectronics and Optoelectronics. – 2012. – V. 7. – N. 6. – P. 583-590.
4 Künzner N., Kovalev D., Diener J., Gross E., Timoshenko V. Yu., Polisski G., Koch F., Fujii M. Giant birefringence in anisotropically nanostructured silicon //Optics letters. – 2001. – V. 26,N. 16. – P. 1265-1267.
5 Timoshenko V.Yu.,Osminkina L.A., Efimova A.I., Golovan L.A., Kashkarov P.K., Kovalev D., Künzner N., Gross E., Diener J., Koch F. Anisotropy of optical absorption in birefringent porous silicon //Physical Review B. – 2003. – V. 67,N. 11. – P. 113405.
6 Kashkarov P.K.,Golovan L.A., Fedotov A.B., Efimova A.I., Kuznetsova L.P., Timoshenko V.Yu, Sidorov-Biryukov D.A., Zheltikov A.M., Haus J.W. Photonic bandgap materials and birefringent layers based on anisotropically nanostructured silicon // JOSA B. – 2002. – V. 19,N. 9. – P. 2273-2281.
7 Peng K.Q.,Yan Y.-J., Gao S.-P., Zhu J. Synthesis of large-area silicon nanowire arrays via self-assembling nanoelectro¬chemistry //Advanced Materials. – 2002. – V. 14,N. 16. – P. 1164.
8 Boarino L.,Boratto C., Geobaldo F. NO 2 monitoring at room temperature by a porous silicon gas sensor //Materials Science and Engineering: B. – 2000. – V. 69. – P. 210-214.
9 Pancheri L.,Oton C.J., Caburro Z. Very sensitive porous silicon NO 2 sensor //Sensors and Actuators B: Chemical. – 2003. – V. 89,N. 3. – P. 237-239.
10 Osminkina L.A., Gonchar K.A., Marshov V.S., Bunkov K.V., Petrov D.V., Golovan L.A., Talkenberg F., Sivakov V.A., Timoshenko V.Yu. Optical properties of silicon nanowire arrays formed by metal-assisted chemical etching: evidences for light localization effect //Nanoscale research letters. – 2012. – V. 7,N. 1. – P. 1-6.
11 Oh J., Yuan H.C., Branz H.M. An 18.2%-efficient black-silicon solar cell achieved through control of carrier recombination in nanostructures //Nature nanotechnology. – 2012. – V. 7, N. 11. – P. 743-748.
