Calculation of technological parameters of deposition process of carbon films on copper buffer layer
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Keywords:
carbon films, buffer layer, sputtering coefficient, sputtering rate, evaporation rate.Abstract
In work calculations results of analytical dependences of technological parameters of deposition process of carbon films on copper buffer layer are presented, which allow to predict optimal concentration of hydrogen in a gas mix, intervals of working tension target-anode, thickness of deposited films and respectively time of experiments.References
1 A review of diamond synthesis by CVD processes, Michael Schwande, Knut Partes. Diamond and Related Materials,
Volume 20, Issue 9, 2011, pp. 1287-1301.
2 Carbon Materials and Nanotechnology. Anke Krueger, Copyright © 2010 WILEY-VCH Verlag GmbH & Co. KGaA,
Weinheim, ISBN: 978-3-527-31803-2, pp. 475.
3 Preparation of diamond films with controllable surface morphology, orientation and quality in an overmoded microwave
plasma CVD chamber. J. Wenga, J.H. Wanga, S.Y. Daia, L.W. Xiongb, W.D. Manb, F. Liub. Applied Surface Science, Volume 276,
2013, pp. 529-534.
4 Mansurov B. The influence of applied fields on the nucleation and growth of heteroepitaxial carbon films. Nanoscale devices
– fundamentals and applications, R. Gross et al. (eds), 2006, Springer, Netherlands. -P. 387-399.
5 Danilin B.S. Primeneniye nizkotemperaturnoy plazmy dlya naneseniya tonkikh plenok. M.: Energoatomizdat, 1989. -328 s.
6 Sigmund P.. Theory of sputtering. I. Sputtering yield of amorphous and polycrystalline targets. – Physical Review, 1969, vol.
184, N 2. – P.. 383-416.
7 Pod red. R. Berisha. Raspyleniye tverdykh tel ionnoy bombardirovkoy. - M.: Mir, 1984, s. 233-234 (dlya medi), s. 223 (dlya
grafita).
8 Danilin B.S., Kireyev V.YU. Ionnoye travleniye mikrostruktur. M.: Sovetskoye radio, 1979. -103 s.
Volume 20, Issue 9, 2011, pp. 1287-1301.
2 Carbon Materials and Nanotechnology. Anke Krueger, Copyright © 2010 WILEY-VCH Verlag GmbH & Co. KGaA,
Weinheim, ISBN: 978-3-527-31803-2, pp. 475.
3 Preparation of diamond films with controllable surface morphology, orientation and quality in an overmoded microwave
plasma CVD chamber. J. Wenga, J.H. Wanga, S.Y. Daia, L.W. Xiongb, W.D. Manb, F. Liub. Applied Surface Science, Volume 276,
2013, pp. 529-534.
4 Mansurov B. The influence of applied fields on the nucleation and growth of heteroepitaxial carbon films. Nanoscale devices
– fundamentals and applications, R. Gross et al. (eds), 2006, Springer, Netherlands. -P. 387-399.
5 Danilin B.S. Primeneniye nizkotemperaturnoy plazmy dlya naneseniya tonkikh plenok. M.: Energoatomizdat, 1989. -328 s.
6 Sigmund P.. Theory of sputtering. I. Sputtering yield of amorphous and polycrystalline targets. – Physical Review, 1969, vol.
184, N 2. – P.. 383-416.
7 Pod red. R. Berisha. Raspyleniye tverdykh tel ionnoy bombardirovkoy. - M.: Mir, 1984, s. 233-234 (dlya medi), s. 223 (dlya
grafita).
8 Danilin B.S., Kireyev V.YU. Ionnoye travleniye mikrostruktur. M.: Sovetskoye radio, 1979. -103 s.
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Мansurov B. Z., Мedyanova B. S., Mansurova, M. E., & Аliyev B. A. (2013). Calculation of technological parameters of deposition process of carbon films on copper buffer layer. Recent Contributions to Physics (Rec.Contr.Phys.), 46(3), 49–57. Retrieved from https://bph.kaznu.kz/index.php/zhuzhu/article/view/99
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Condensed Matter Physics and Materials Science Problems. NanoScience
