Структура и фазовый состав эпитаксиальных пленок SiC, выращенных методом замещения атомов
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Кілттік сөздер:
тонкие пленки, карбид кремния, дилатационный диполь, структура, кристаллизацияАннотация
В данной работе методами рентгеновской дифракции, электронографии, атомно-силовой микроскопии и рамановской микроскопии исследованы структура, фазовый состав и микроструктура поверхности пленки SiC, синтезированной методом замещения атомов в высокоомном c-Si ориентации (111) в смеси газов CO и SiН4 (264 Па, 1250°С, 15 мин). Показано, что пленка 3C-SiC является эпитаксиальной и не содержит двойников на поверхности, имеет пирамидальную структуру поверхности с колебаниями высоты до 19 нм с отчетливой фрагментацией зерен размером от 100 до 200 нм. Определены поперечные размеры крупных кристаллов (85 × 110 мкм) и средние размеры нанокристаллов β-SiC (3 – 7 нм) с совершенной структурой в переходной области «пленка-подложка». Показано отсутствие крупных царапин на поверхности пленки SiC. Развитая кристаллическая поверхность пленки свидетельствует об образовании высококачественных кристаллов SiC за счет залечивания усадочных пор в течение длительного (15 мин) высокотемпературного синтеза.
Библиографиялық сілтемелер
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2. Fissel A. Artificially layered heteropolytypic structures based on SiC polytypes: molecular beam epitaxy, characterization and properties // Phys. Rep. – 2003. – Vol.379. – P.149-155.
3. Nishino S., Powell J.A., Will H.A. Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices // Appl. Phys. Lett. – 1983. – Vol. 42. – P.460.
4. Hamakawa Y. Physics and Applications of Amorphous Silicon Carbide. In: Rahman MM., Yang CY-W, Harris GL (Eds.), Amorphous and Crystalline Silicon Carbide II, Springer Proceedings in Physics, 1989. – Vol. 43. – P. 164–170.
5. Joung Y-H., Kang H.I., Kim J.H., Lee H-S, Lee J. and Choi W.S. SiC formation for a solar cell passivation layer using an RF magnetron co-sputtering system // Nanoscale Research Letters. – 2012. – Vol. 7(1). – P.22.
6. Kukushkin S.A. and Osipov A.V. Theory and practice of SiC growth on Si and its applications to wide-gap semiconductor films // J. of Phys. D: Appl. Phys. – 2014. – Vol.47. –P.313001-313041.
7. Kukushkin S.A., Osipov A.V., and Feoktistov N.A. Synthesis of epitaxial silicon carbide films through the substitution of atoms in the silicon crystal lattice: A review // Physics of the Solid State. – 2014. – Vol.56(8). – P.1507–1535.
8. Kukushkin S.A., Osipov A.V. A new method for the synthesis of epitaxial layers of silicon carbide on silicon owing to formation of dilatation dipoles // J. Appl. Phys. – 2013. – Vol.113(2) – P.024909-1-024909-7.
9. Кукушкин С.А., Осипов А.В., Феоктистов Н.А. Способ изготовления изделия, содержащего кремниевую подложку с пленкой из карбида кремния на ее поверхности. – Патент на изобретение № 2363067, 2008.
10. Nussupov K.Kh., Beisenkhanov N.B. in: Moumita Mukherjee, Silicon carbide – Materials // Processing and Applications in Electronic Devices, InTech, 2011. – P.69−114.
11. Nussupov K.Kh., Beisenkhanov N.B., Valitova I.V., Mit’ K.A., Mukhamedshina D.M., Dmitrieva E.A. Structure properties of carbon implanted silicon layers // J. of Materials Science: Materials in Electronics. – 2008. – Vol.19. – P.254−262.
12. Jones F.W. The measurement of particle size by the X-ray method // Proc. Roy. Soc., London. – 1938. – 166A. – P. 16–43.
13. Scherrer .P Bestimmung der Grösse und der inneren Struktur von Kolloidteilchen mittels Röntgenstrahlen // Nachr. Ges. Wiss. Göttingen. – 1918. – Vol. 26. – P. 98-100.
14. Taylor A. X-ray Metallography. John Wiley & Sons, New York – London, 1961. – 993p.
15. Warren B.E., Biscoe J. // Journal of American Ceramic Society. – 1938. – Vol.21(1) P.49–54.
16. Bakranova D.I., Kukushkin S.A., Nussupov K.Kh., Osipov A.V., Beisenkhanov N.B. Epitaxial Silicon Carbide Films Grown by New Method of Replacement of Atoms on the Surface of High-resistivity (111) Oriented Silicon // MATEC Web of Conferences New York. – 2016. – Vol. 43. – P.01003.
17. Pezoldt J., Kups T., Stauden T., Schroter B. Polarity determination and control of SiC grown on Si // Materials Science and Engineering B. – 2009. – Vol.165. – P. 28–33.
18. Benemanskaya G.V., Dementev P.A., Kukushkin S.А., Lapushkin M.N., Osipov A.V., Senkovskiy B., Timoshnev S.N. Photoemission study of nano SiC epitaxial layers synthesized by a new method of the atom substitution in Si crystal lattice // Materials Physics and Mechanics. – 2015. – Vol.22. –P.183-190.
References
1. W.J. Choyke, H.M. Matsunami, G. Pensl Silicon carbide, A. Review of fundamental questions and application to current device technology. Akademie, Berlin. V. I, II. (1998)
2. A. Fissel, Phys. Rep. 379, 149-155. (2003)
3. S. Nishino, J.A.Powell, H.A. Will, Appl. Phys. Lett. 42, 460. (1983)
4. Y. Hamakawa, Physics and Applications of Amorphous Silicon Carbide. In: Rahman M.M., Yang CY.-W., Harris G.L. (Eds.), Amorphous and Crystalline Silicon Carbide II, Springer Proceedings in Physics. 43, 164–170. (1989)
5. Y.-H. Joung, H.I. Kang, J.H. Kim, H.-S. Lee, J. Lee and W.S. Choi, Nanoscale Research Letters 7(1):22. (2012).
6. S.A. Kukushkin, and A.V. Osipov, J. of Phys D: Appl. Phys. 47, 313001-313041. (2014).
7. S.A. Kukushkin, A.V. Osipov, and N.A. Feoktistov, Physics of the Solid State, 56(8), 1507–1535. (2014).
8. S.A. Kukushkin, A.V. Osipov, J. Appl. Phys. 113 (2), 024909-1-024909-7. (2013).
9. S.A. Kukushkin, A.V. Osipov and N.A. Feoktistov, Method of manufacturing an article comprising a silicon substrate with a silicon carbide film on its surface Patent № 2363067 (in Russian). (2008)
10. K.Kh. Nussupov, N.B. Beisenkhanov, in: Moumita Mukherjee, Silicon carbide – Materials, Processing and Applications in Electronic Devices, InTech, pp. 69−114. (2011).
11. K.Kh. Nussupov, N.B. Beisenkhanov, I.V. Valitova, K.A. Mit’, D.M. Mukhamedshina, E.A. Dmitrieva, J. of Materials Science: Materials in Electronics, 19, 254−262. (2008).
12. F.W. Jones, The measurement of particle size by the X-ray method. Proc. Roy. Soc., London 166A, 16–43. (1938).
13. P. Scherrer, Bestimmung der Grösse und der inneren Struktur von Kolloidteilchen mittels Röntgenstrahlen. Nachr. Ges. Wiss. Göttingen, 26, 98-100. (1918).
14. A. Taylor, X-ray Metallography. John Wiley & Sons, New York – London, 993p. (1961).
15. B.E. Warren, J. Biscoe, Journal of American Ceramic Society, 21(1), 49–54. (1938).
16. D.I. Bakranova, S.A. Kukushkin, K.Kh. Nussupov, A.V. Osipov, N.B. Beisenkhanov Epitaxial Silicon Carbide Films Grown by New Method of Replacement of Atoms on the Surface of High-resistivity (111) Oriented Silicon, MATEC Web of Conferences 43, New York. P.01003. (2016).
17. J. Pezoldt, T. Kups, T. Stauden, B. Schroter, Materials Science and Engineering B, 165, 28–33. (2009).
18. G.V. Benemanskaya, P.A. Dementev, S.А. Kukushkin, M.N. Lapushkin, A.V. Osipov, B. Senkovskiy, S.N. Timoshnev, Materials Physics and Mechanics, 22, 183-190. (2015)
2. Fissel A. Artificially layered heteropolytypic structures based on SiC polytypes: molecular beam epitaxy, characterization and properties // Phys. Rep. – 2003. – Vol.379. – P.149-155.
3. Nishino S., Powell J.A., Will H.A. Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices // Appl. Phys. Lett. – 1983. – Vol. 42. – P.460.
4. Hamakawa Y. Physics and Applications of Amorphous Silicon Carbide. In: Rahman MM., Yang CY-W, Harris GL (Eds.), Amorphous and Crystalline Silicon Carbide II, Springer Proceedings in Physics, 1989. – Vol. 43. – P. 164–170.
5. Joung Y-H., Kang H.I., Kim J.H., Lee H-S, Lee J. and Choi W.S. SiC formation for a solar cell passivation layer using an RF magnetron co-sputtering system // Nanoscale Research Letters. – 2012. – Vol. 7(1). – P.22.
6. Kukushkin S.A. and Osipov A.V. Theory and practice of SiC growth on Si and its applications to wide-gap semiconductor films // J. of Phys. D: Appl. Phys. – 2014. – Vol.47. –P.313001-313041.
7. Kukushkin S.A., Osipov A.V., and Feoktistov N.A. Synthesis of epitaxial silicon carbide films through the substitution of atoms in the silicon crystal lattice: A review // Physics of the Solid State. – 2014. – Vol.56(8). – P.1507–1535.
8. Kukushkin S.A., Osipov A.V. A new method for the synthesis of epitaxial layers of silicon carbide on silicon owing to formation of dilatation dipoles // J. Appl. Phys. – 2013. – Vol.113(2) – P.024909-1-024909-7.
9. Кукушкин С.А., Осипов А.В., Феоктистов Н.А. Способ изготовления изделия, содержащего кремниевую подложку с пленкой из карбида кремния на ее поверхности. – Патент на изобретение № 2363067, 2008.
10. Nussupov K.Kh., Beisenkhanov N.B. in: Moumita Mukherjee, Silicon carbide – Materials // Processing and Applications in Electronic Devices, InTech, 2011. – P.69−114.
11. Nussupov K.Kh., Beisenkhanov N.B., Valitova I.V., Mit’ K.A., Mukhamedshina D.M., Dmitrieva E.A. Structure properties of carbon implanted silicon layers // J. of Materials Science: Materials in Electronics. – 2008. – Vol.19. – P.254−262.
12. Jones F.W. The measurement of particle size by the X-ray method // Proc. Roy. Soc., London. – 1938. – 166A. – P. 16–43.
13. Scherrer .P Bestimmung der Grösse und der inneren Struktur von Kolloidteilchen mittels Röntgenstrahlen // Nachr. Ges. Wiss. Göttingen. – 1918. – Vol. 26. – P. 98-100.
14. Taylor A. X-ray Metallography. John Wiley & Sons, New York – London, 1961. – 993p.
15. Warren B.E., Biscoe J. // Journal of American Ceramic Society. – 1938. – Vol.21(1) P.49–54.
16. Bakranova D.I., Kukushkin S.A., Nussupov K.Kh., Osipov A.V., Beisenkhanov N.B. Epitaxial Silicon Carbide Films Grown by New Method of Replacement of Atoms on the Surface of High-resistivity (111) Oriented Silicon // MATEC Web of Conferences New York. – 2016. – Vol. 43. – P.01003.
17. Pezoldt J., Kups T., Stauden T., Schroter B. Polarity determination and control of SiC grown on Si // Materials Science and Engineering B. – 2009. – Vol.165. – P. 28–33.
18. Benemanskaya G.V., Dementev P.A., Kukushkin S.А., Lapushkin M.N., Osipov A.V., Senkovskiy B., Timoshnev S.N. Photoemission study of nano SiC epitaxial layers synthesized by a new method of the atom substitution in Si crystal lattice // Materials Physics and Mechanics. – 2015. – Vol.22. –P.183-190.
References
1. W.J. Choyke, H.M. Matsunami, G. Pensl Silicon carbide, A. Review of fundamental questions and application to current device technology. Akademie, Berlin. V. I, II. (1998)
2. A. Fissel, Phys. Rep. 379, 149-155. (2003)
3. S. Nishino, J.A.Powell, H.A. Will, Appl. Phys. Lett. 42, 460. (1983)
4. Y. Hamakawa, Physics and Applications of Amorphous Silicon Carbide. In: Rahman M.M., Yang CY.-W., Harris G.L. (Eds.), Amorphous and Crystalline Silicon Carbide II, Springer Proceedings in Physics. 43, 164–170. (1989)
5. Y.-H. Joung, H.I. Kang, J.H. Kim, H.-S. Lee, J. Lee and W.S. Choi, Nanoscale Research Letters 7(1):22. (2012).
6. S.A. Kukushkin, and A.V. Osipov, J. of Phys D: Appl. Phys. 47, 313001-313041. (2014).
7. S.A. Kukushkin, A.V. Osipov, and N.A. Feoktistov, Physics of the Solid State, 56(8), 1507–1535. (2014).
8. S.A. Kukushkin, A.V. Osipov, J. Appl. Phys. 113 (2), 024909-1-024909-7. (2013).
9. S.A. Kukushkin, A.V. Osipov and N.A. Feoktistov, Method of manufacturing an article comprising a silicon substrate with a silicon carbide film on its surface Patent № 2363067 (in Russian). (2008)
10. K.Kh. Nussupov, N.B. Beisenkhanov, in: Moumita Mukherjee, Silicon carbide – Materials, Processing and Applications in Electronic Devices, InTech, pp. 69−114. (2011).
11. K.Kh. Nussupov, N.B. Beisenkhanov, I.V. Valitova, K.A. Mit’, D.M. Mukhamedshina, E.A. Dmitrieva, J. of Materials Science: Materials in Electronics, 19, 254−262. (2008).
12. F.W. Jones, The measurement of particle size by the X-ray method. Proc. Roy. Soc., London 166A, 16–43. (1938).
13. P. Scherrer, Bestimmung der Grösse und der inneren Struktur von Kolloidteilchen mittels Röntgenstrahlen. Nachr. Ges. Wiss. Göttingen, 26, 98-100. (1918).
14. A. Taylor, X-ray Metallography. John Wiley & Sons, New York – London, 993p. (1961).
15. B.E. Warren, J. Biscoe, Journal of American Ceramic Society, 21(1), 49–54. (1938).
16. D.I. Bakranova, S.A. Kukushkin, K.Kh. Nussupov, A.V. Osipov, N.B. Beisenkhanov Epitaxial Silicon Carbide Films Grown by New Method of Replacement of Atoms on the Surface of High-resistivity (111) Oriented Silicon, MATEC Web of Conferences 43, New York. P.01003. (2016).
17. J. Pezoldt, T. Kups, T. Stauden, B. Schroter, Materials Science and Engineering B, 165, 28–33. (2009).
18. G.V. Benemanskaya, P.A. Dementev, S.А. Kukushkin, M.N. Lapushkin, A.V. Osipov, B. Senkovskiy, S.N. Timoshnev, Materials Physics and Mechanics, 22, 183-190. (2015)
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Как цитировать
Bakranova, D., Kukushkin, S., Nussupov, K., Osipov, A., & Beisenkhanov, N. (2018). Структура и фазовый состав эпитаксиальных пленок SiC, выращенных методом замещения атомов. ҚазНУ Хабаршысы. Физика сериясы, 60(1), 46–51. вилучено із https://bph.kaznu.kz/index.php/zhuzhu/article/view/512
Шығарылым
Бөлім
Физика конденсированного состояния и проблемы материаловедения. Нанонаука
