FORMATION OF LUMINESCENT NANOCRYSTALLINE SILICON FILMS FROM A-SI:H BY USING RAPID THERMAL ANNEALING AND WET CHEMICAL ETCHING
62 22
Кілттік сөздер:
Nanocrystalline, photoluminescence methodsАннотация
Nanocrystalline silicon films, which exhibit efficient photoluminescence, were formed from amorphous films of hydrogenated silicon subjected to rapid thermal annealing and stain etching in hydrofluoric acid based solutions. The samples were investigated by means of scanning and transmission electron microscopy, optical spectroscopy of reflection, Raman scattering and photoluminescence methods, which revealed the nanocrystalline structure and excellent optical quality of the formed nc-Si films.Библиографиялық сілтемелер
1. M. E. Castanga, S. Coffa, M. Monaco, L. Caristia, A. Messina, R. Mangano, C. Bongiorno. Physica E 16, 547 (2003).
2. L. Ferraioli, M.Wang, G. Pucker, D. Navarro-Urrios, N. Daldosso, C. Kompocholis, L. Pavesi, J. Nanomaterials, 2007 , 43491 (2007).
3. M. Xie, Z. Yuan, B. Qian, L. Pavesi. Chin. Opt. Lett. 7, 319 (2009). 72
4. I. Solomon, K. Rerbal, J.-N. Chazalviel, F. Oanam, R. Cortes, J.Appl.Phys. 103, 083108 (2008).
5. P. R. Cabarrocas, A.F.Morral, B. Kalachem S. Kasoiut, Sol. State Phenomena, 93, 227 (2003).
6. A. Szekeres, M. Gartner, F. Vasiliu, M. Marinov, G. Beshkov, J. Non-Cryst. Solids, 227- 230, 954 (1998).
7. E. San Andrés, A. del Prado, I. Mártil, G. González Díaz, F. L. Martinez, D. Bravo, F. J. López, Vacuum 67, 531 (2002).
8. W. Zhang, S. Zhang, Y. Liu, T. Chen, J. Cryst. Growth 331, 1296 (2009).
9. A. H. Mahan, B. Roy, R. C. Reedy, D. W. Readey, D. S. Ginley, J. Appl. Phys. 99, 023507 (2006).
10. A. J. Steckl, J. Xu, H.C.Mogul, Appl. Phys. Lett. 62, 2111 (1993).
11. L.H. Campbell, P.M. Fauchet. Solid State Comm. 58, 739 (1986).
12. J. Zi, H. Buscher, C. Falter, W. Ludwig, K. Zhang, X. Xie. Appl. Phys. Lett. 69, 200 (1996).
13. D. Kovalev, H. Heskler, G. Polliski, F. Koch, Phys. Stat Sol. (b) 215, 871 (1999).
14. L.I. Belogorokhova, A.I. Belogorokhov, S.A. Gavrilov, V.Yu. Timoshenko, P.K. Kashkarov, M.G. Lisachenko, S.P. Kobeleva, Phys. Stat. Sol. (a) 197, 228 (2003).
2. L. Ferraioli, M.Wang, G. Pucker, D. Navarro-Urrios, N. Daldosso, C. Kompocholis, L. Pavesi, J. Nanomaterials, 2007 , 43491 (2007).
3. M. Xie, Z. Yuan, B. Qian, L. Pavesi. Chin. Opt. Lett. 7, 319 (2009). 72
4. I. Solomon, K. Rerbal, J.-N. Chazalviel, F. Oanam, R. Cortes, J.Appl.Phys. 103, 083108 (2008).
5. P. R. Cabarrocas, A.F.Morral, B. Kalachem S. Kasoiut, Sol. State Phenomena, 93, 227 (2003).
6. A. Szekeres, M. Gartner, F. Vasiliu, M. Marinov, G. Beshkov, J. Non-Cryst. Solids, 227- 230, 954 (1998).
7. E. San Andrés, A. del Prado, I. Mártil, G. González Díaz, F. L. Martinez, D. Bravo, F. J. López, Vacuum 67, 531 (2002).
8. W. Zhang, S. Zhang, Y. Liu, T. Chen, J. Cryst. Growth 331, 1296 (2009).
9. A. H. Mahan, B. Roy, R. C. Reedy, D. W. Readey, D. S. Ginley, J. Appl. Phys. 99, 023507 (2006).
10. A. J. Steckl, J. Xu, H.C.Mogul, Appl. Phys. Lett. 62, 2111 (1993).
11. L.H. Campbell, P.M. Fauchet. Solid State Comm. 58, 739 (1986).
12. J. Zi, H. Buscher, C. Falter, W. Ludwig, K. Zhang, X. Xie. Appl. Phys. Lett. 69, 200 (1996).
13. D. Kovalev, H. Heskler, G. Polliski, F. Koch, Phys. Stat Sol. (b) 215, 871 (1999).
14. L.I. Belogorokhova, A.I. Belogorokhov, S.A. Gavrilov, V.Yu. Timoshenko, P.K. Kashkarov, M.G. Lisachenko, S.P. Kobeleva, Phys. Stat. Sol. (a) 197, 228 (2003).
Жүктелулер
Как цитировать
Taurbayev, Y. T., Dihanbayev, K. K., Nikulin, V. E., Svanbayev, E. A., Taurbayev, T. I., Timoshenko, Y., Maslova, N. E., & Gonchar, K. A. (2009). FORMATION OF LUMINESCENT NANOCRYSTALLINE SILICON FILMS FROM A-SI:H BY USING RAPID THERMAL ANNEALING AND WET CHEMICAL ETCHING. ҚазНУ Хабаршысы. Физика сериясы, 31(4), 67–72. вилучено із https://bph.kaznu.kz/index.php/zhuzhu/article/view/228
Шығарылым
Бөлім
Физика конденсированного состояния и проблемы материаловедения. Нанонаука
