PREPARATION AND OPTICAL PROPERTIES OF NANOSTRUCTURED ANTIREFLECTIVE LAYERS FOR Si-PHOTODEVICES

Abstract

The layers of nanoporous silicon are formed by using the method of electrochemical anodization on the surface of silicon polished wafers with the surface highly-doped n+ layer. The layers were fabricated at the constant direct current using the anodization process and at the current, which varies according to the certain time law. The electrochemical anodization was performed in the standard cell and by using capillary method, as well. The dependence of the spectral reflection index on various of layer preparation (current density, etching time and the time dependence of the current density) is investigated.