Development of silicon strip detectors with orthogonal field

  • A.K. Saymbetov Al Farabi Kazakh National University, Kazakstan, Almaty
  • A.K. Imanbayeva Al Farabi Kazakh National University, Kazakstan, Almaty
  • Y.K. Toshmurodov Physico-Technical Institute of the Academy of Sciences of Uzbekistan, Tashkent, Uzbekistan
  • B.K. Mukhametkali Al Farabi Kazakh National University, Kazakstan, Almaty
  • N.M. Japashov Al Farabi Kazakh National University, Kazakstan, Almaty
  • Zh.G. Ayazbay Al Farabi Kazakh National University, Kazakstan, Almaty

Abstract

The development of semiconductor strip detectors with orthogonal field with high energy and position resolution, linearity of the signal over a wide energy range for various types of particles, is closely linked with the technology of manufacturing the detection modules and semiconductor properties of the original crystal. In this paper we consider the physical and technological features of manufacturing of Si (Li) strip detectors with orthogonal field with a large sensitive area. The manufactured detectors have following electro-physical and radiometric characteristics: under working voltage U = (50-600)V shows the I ~ (0,1÷0,5) µА reversed current, capacitance is С = 25 pF, noise E = (12÷35) keV, energy resolution Rβ = 18 keV from the source of 207Bi (Eβ= 1МeV) and Rα = 46 keV from the source of 238Pu (Eα ≈ 5,5MeV). Investigation of the impact of irregularities on characteristics of strip detectors, as well as their role in the phenomena of charge transport in a condition of orthogonal field.

References

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References

1. Y.K. Akimov, Instruments and Experimental Techniques, 50(1), 1-28, (2007).
2. T.E. Schlesinger et al., Materials Science and Engineering: R: Reports, 32, 4, 103-189. (2001).
3. S.A. Azimov et al., FAN, Tashkent, 256, (1981).
4. R.A. Muminov, S.A. Radzhapov, A.K. Saimbetov, Atomic energy, 106(2), 141-142, (2009).
5. R.A. Muminov, A.K. Saymbetov, Y.K. Toshmurodov, Instruments and Experimental Techniques, 56(1), 32-33, (2013).
6. R.A. Muminov, S.A. Radzhapov, A.K. Saimbetov, Technical Physics Letters, 35(8), 768-769, (2009).
Published
2017-10-10
How to Cite
SAYMBETOV, A.K. et al. Development of silicon strip detectors with orthogonal field. Recent Contributions to Physics (Rec.Contr.Phys.), [S.l.], v. 61, n. 2, p. 33-36, oct. 2017. ISSN 2663-2276. Available at: <https://bph.kaznu.kz/index.php/zhuzhu/article/view/530>. Date accessed: 27 oct. 2020.
Section
Condensed Matter Physics and Materials Science Problems. NanoScience

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