Development of silicon strip detectors with orthogonal field

Authors

  • A.K. Saymbetov Al Farabi Kazakh National University, Kazakstan, Almaty
  • A.K. Imanbayeva Al Farabi Kazakh National University, Kazakstan, Almaty
  • Y.K. Toshmurodov Physico-Technical Institute of the Academy of Sciences of Uzbekistan, Tashkent, Uzbekistan
  • B.K. Mukhametkali Al Farabi Kazakh National University, Kazakstan, Almaty
  • N.M. Japashov Al Farabi Kazakh National University, Kazakstan, Almaty
  • Zh.G. Ayazbay Al Farabi Kazakh National University, Kazakstan, Almaty
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Keywords:

p-i-n stucture, detector, Si(Li) strip detector

Abstract

The development of semiconductor strip detectors with orthogonal field with high energy and position resolution, linearity of the signal over a wide energy range for various types of particles, is closely linked with the technology of manufacturing the detection modules and semiconductor properties of the original crystal. In this paper we consider the physical and technological features of manufacturing of Si (Li) strip detectors with orthogonal field with a large sensitive area. The manufactured detectors have following electro-physical and radiometric characteristics: under working voltage U = (50-600)V shows the I ~ (0,1÷0,5) µА reversed current, capacitance is С = 25 pF, noise E = (12÷35) keV, energy resolution Rβ = 18 keV from the source of 207Bi (Eβ = 1МeV) and Rα = 46 keV from the source of 238Pu (Eα ≈ 5,5MeV). Investigation of the impact of irregularities on characteristics of strip detectors, as well as their role in the phenomena of charge transport in a condition of orthogonal field.

References

1. Akimov Y.K. Silicon radiation detectors (Review) // Instruments and Experimental Techniques. – 2007. – Vol. 50. – №. 1. – P. 1-28.
2. Schlesinger T.E. et al. Cadmium zinc telluride and its use as a nuclear radiation detector material //Materials Science and Engineering: R: Reports. – 2001. – Vol. 32. – №. 4. – P. 103-189.
3. Azimov S.A. et al. Silicon-Lithium Nuclear Radiation Detectors // FAN, Tashkent. – 1981. – P. 256.
4. Muminov R.A., Radzhapov S.A., Saimbetov A.K. Silicon-lithium telescopic detector in one crystal //Atomic energy. – 2009. – Vol. 106. – №. 2. – P. 141-142.
5. Muminov R.A., Saymbetov A.K., Toshmurodov Y.K. Special features of formation of high-performance semiconductor detectors based on αSi-Si (Li) heterostructures //Instruments and Experimental Techniques. – 2013. – Vol. 56. – №. 1. – P. 32-33.
6. Muminov R.A., Radzhapov S.A., Saimbetov A.K. Developing Si (Li) nuclear radiation detectors by pulsed electric field treatment //Technical Physics Letters. – 2009. – Vol. 35. – №. 8. – P. 768-769.

References

1. Y.K. Akimov, Instruments and Experimental Techniques, 50(1), 1-28, (2007).
2. T.E. Schlesinger et al., Materials Science and Engineering: R: Reports, 32, 4, 103-189. (2001).
3. S.A. Azimov et al., FAN, Tashkent, 256, (1981).
4. R.A. Muminov, S.A. Radzhapov, A.K. Saimbetov, Atomic energy, 106(2), 141-142, (2009).
5. R.A. Muminov, A.K. Saymbetov, Y.K. Toshmurodov, Instruments and Experimental Techniques, 56(1), 32-33, (2013).
6. R.A. Muminov, S.A. Radzhapov, A.K. Saimbetov, Technical Physics Letters, 35(8), 768-769, (2009).

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How to Cite

Saymbetov, A., Imanbayeva, A., Toshmurodov, Y., Mukhametkali, B., Japashov, N., & Ayazbay, Z. (2017). Development of silicon strip detectors with orthogonal field. Recent Contributions to Physics (Rec.Contr.Phys.), 61(2), 33–36. Retrieved from https://bph.kaznu.kz/index.php/zhuzhu/article/view/530

Issue

Vol. 61 No. 2 (2017): Recent Contributions to Physics

Section

Condensed Matter Physics and Materials Science Problems. NanoScience

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