CREATION AND INVESTIGATION OF PARAMETERS OF SEMICONDUCTOR DEVICES ON THE BASED AlAs-GaAs - FILMS

Authors

  • V. S. Antoschenko НИИЭТФ, Казахский национальный университет им. аль-Фараби
  • Sh. B. Baiganatova
  • T. I. Taurbayev
  • Yu. V. Frantsev
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Keywords:

phototransducer

Abstract

A cheap thin-film phototransducer with Аu/n - GaАs/n+ - GаАs/n – AlGaAs structure that was formed using a molten solution by the method of growth separation during liquid-phase epitaxy has been developed. Our obtained results show the adventage of application of sepation-film technology for developing devices in micro- and optoelectronics.

References

1. Антощенко В.С., Таурбаев Т.И., Байганатова Ш.Б. Изучение формирования свободно расположенных пленок арсенида галлия в условиях раствор-расплавной кристаллизации // Вестник КазНУ , сер.Физическая.- №1(19), 2005.- С.70-75.

2. Антощенко В.С., Таурбаев Т.И. Аномальный рост монокристаллических пленок при жидкостной эпитаксии // Электронная техника. Сер.6, Материалы, Вып.2(201), 1985.- С.54-58.

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How to Cite

Antoschenko, V. S., Baiganatova, S. B., Taurbayev, T. I., & Frantsev, Y. V. (2009). CREATION AND INVESTIGATION OF PARAMETERS OF SEMICONDUCTOR DEVICES ON THE BASED AlAs-GaAs - FILMS. Recent Contributions to Physics (Rec.Contr.Phys.), 31(4), 40–44. Retrieved from https://bph.kaznu.kz/index.php/zhuzhu/article/view/223

Issue

Vol. 31 No. 4 (2009): KazNU Bulletin. Physics series

Section

Condensed Matter Physics and Materials Science Problems. NanoScience

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