Porous silicon based light emitting diodes
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Keywords:
electroluminescenc, photoluminescence, light-emitting diode, current–voltage characteristicAbstract
At the moment there is a need to create light-emitting diodes based on porous silicon, with the intensity of radiation in the visible region. In this paper we consider the relevance of the research direction, the method of creating light-emitting diode based on a sandwich structure with porous silicon and created prototypes, their electro-and photoluminescence and current-voltage characteristics have been investigated.
References
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2 Kuznetsov V.A., Andrienko I., Haneman D., Electro J. Photo and Scanning Tunneling- Luminescence Studies of LED Porous Silicon // J. of Por. Mat., -2000. №7, – P. 125-130.
3 Beliakov L.V., Goriachev D.N., Sresly О.М. Photorespons and electroluminescence structures Si/por-Si/ Metal chem. deposited // J. FTS, 2000, V. 34,- 11, – P. 1386-1389.
4 Pavesi L., Ceschini M., Roman H. Recombination dynamics in Porous Silicon // Thin Solid Films, 1995, V. 255. – P. 67-69.
5 Shatkovskiy Ye., Vertsinskiy YA. Fotolyuminestsentsiya v poristom kremnii pri intensivnom lazernom vozbuzhdenii // FTT, 1997, T. 31. – S. 593-596.
6 Fauchet P.M., Tsybeskov L., Duttagupta S.P. Stable photoluminescence and electroluminescence from porous silicon // Thin Solid Films, 1997. 297. – P. 254-256.
7 Pavesi L., Guardini R., Bellutti P. Porous Silicon n-p emitting diode // Thin Solid Films, 1997. – P. 272- 275.
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Published
2013-06-17
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Section
Condensed Matter Physics and Materials Science Problems. NanoScience
